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EMD22 PDF预览

EMD22

更新时间: 2024-01-12 20:06:00
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管光电二极管
页数 文件大小 规格书
4页 83K
描述
General purpose (dual digital transistors)

EMD22 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code:unknown风险等级:5.73
Is Samacsys:N其他特性:BUILT IN BIAS RESISTANCE RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

EMD22 数据手册

 浏览型号EMD22的Datasheet PDF文件第2页浏览型号EMD22的Datasheet PDF文件第3页浏览型号EMD22的Datasheet PDF文件第4页 
EMD22 / UMD22N  
Transistors  
General purpose  
(dual digital transistors)  
EMD22 / UMD22N  
zFeatures  
zExternal dimensions (Unit : mm)  
1) Both the DTA143Z chip and DTC143Z chip in an EMT  
or UMT package.  
EMD22  
2) Mounting possible with EMT3 or UMT3 automatic  
mounting machines.  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
3) Transistor elements are independent, eliminating  
interference.  
Each lead has same dimensions  
4) Mounting cost and area can be cut in half.  
ROHM : EMT6  
Abbreviated symbol : D22  
zStructure  
UMD22N  
A PNP and NPN digital transistor  
(each with a single built in resistor)  
1.25  
2.1  
0.1Min.  
Each lead has same dimensions  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol : D22  
zEquivalent circuit  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
DTr 1  
Unit  
EMD22 / UMD22N  
50  
5 to +30  
100  
Supply voltage  
Input voltage  
V
CC  
IN  
V
V
(3)  
(2)  
R1  
(1)  
V
I
O
Output current  
mA  
R2  
100  
I
C (MAX)  
150  
Power dissipation  
Pd  
mW  
°C  
°C  
DTr1  
150  
Junction temperature  
Tj  
DTr2  
(4)  
55 to +150  
Storage temperature  
120mW per element must not be exceeded  
Tstg  
R2  
R1  
(5)  
R
1
=4.7k  
=47kΩ  
R2  
(6)  
Parameter  
Symbol  
DTr 2  
Unit  
50  
30 to +5  
100  
Supply voltage  
Input voltage  
V
CC  
IN  
V
V
V
I
O
Output current  
mA  
100  
I
C (MAX)  
150  
Power dissipation  
Pd  
mW  
°C  
150  
Junction temperature  
Tj  
55 to +150  
Storage temperature  
120mW per element must not be exceeded  
Tstg  
°C  
Rev.A  
1/3  

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