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EMD2S-T

更新时间： 2024-11-09 13:07:39
品牌 Logo 应用领域
RECTRON 整流二极管桥式整流二极管光电二极管
页数 文件大小 规格书
3页 36K
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中文翻译

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EMD2S-T 数据手册

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EMD1S  
THRU  
RECTRON  
SEMICONDUCTOR  
TECHNICAL SPECIFICATION  
EMD4S  
SINGLE-PHASE GLASS PASSIVATED  
MINI SUPER FAST SURFACE MOUNT BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 200 Volts CURRENT 0.5 Ampere  
FEATURES  
* Surge overload rating - 30 amperes peak  
* Ideal for printed circuit board  
* Reliable low cost construction utilizing molded  
* Glass passivated device  
* Polarity symbols molded on body  
* Mounting position: Any  
MD-S  
* Weight: 0.5 gram  
MECHANICAL DATA  
1
2
3
4
*
Epoxy : Device has UL flammability classification 94V-0  
M D  
.004(0.10) MAX.  
0.028(0.9)  
0.020(0.5)  
0.108(2.74)  
0.092(2.34)  
0.193(4.9)  
0.177(4.5)  
0.106(2.7)  
0.091(2.3)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
0.014(0.35)  
0.006(0.15)  
0.193(4.9)  
0.177(4.5)  
Dimensions in millimeters  
MAXIMUM RATINGS (At T  
A
= 25oC unless otherwise noted)  
RATINGS  
SYMBOL  
EMD1S  
EMD2S  
EMD3S  
EMD4S  
UNITS  
Volts  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
Volts  
Maximum DC Blocking Voltage  
V
DC  
Volts  
Amp  
100  
Maximum Average Forward Output Rectified  
= 30oC  
- on glass-epoxy P.C.B. ( NOTE 1 )  
0.5  
0.8  
Current at  
T
A
I
O
- on aluminum substrate ( NOTE 2 )  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
Typical Junction Capacitance ( Note 5 )  
I
FSM  
20  
15  
Amps  
C
J
pF  
0 C  
Operating and Storage Temperature Range  
T
J,  
T
STG  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At TA  
= 25oC unless otherwise noted)  
CHARACTERISTICS  
SYMBOL  
UNITS  
EMD1S  
EMD2S  
EMD3S  
EMD4S  
Maximum Forward Voltage Drop per Bridge Element at 0.5A DC  
V
F
1.05  
10  
Volts  
= 25oC  
= 125oC  
uAmps  
Maximum Reverse Current at rated  
DC Blocking Voltage per element  
@T  
@T  
A
A
I
R
0.5  
mAmps  
Maximum Reverse Recovery Time (Note 4)  
trr  
50  
nSec  
2002-4  
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads.  
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad.  
3. Suffix “-S” Surface Mount for Mini Dip Bridge.  
4. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.  
5. Measured at 1MHz and applied reverse voltage of 4.0 volts.  
123

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