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EMD2T2R PDF预览

EMD2T2R

更新时间: 2024-01-03 09:09:00
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
4页 85K
描述
General purpose (dual digital transistors)

EMD2T2R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-107
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.12Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):56JESD-30 代码:R-PDSO-F6
JESD-609代码:e2湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signals表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

EMD2T2R 数据手册

 浏览型号EMD2T2R的Datasheet PDF文件第2页浏览型号EMD2T2R的Datasheet PDF文件第3页浏览型号EMD2T2R的Datasheet PDF文件第4页 
EMD2 / UMD2N / IMD2A  
Transistors  
General purpose  
(dual digital transistors)  
EMD2 / UMD2N / IMD2A  
zFeatures  
zExternal dimensions (Unit : mm)  
1) Both the DTA124E chip and DTC124E chip in a EMT  
or UMT or SMT package.  
EMD2  
2) Mounting possible with EMT6 or UMT6 or SMT6  
automatic mounting machines.  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
3) Transistor elements are independent, eliminating  
interference.  
4) Mounting cost and area can be cut in half.  
Each lead has same dimensions  
ROHM : EMT6  
UMD2N  
Abbreviated symbol : D2  
zStructure  
Epitaxial planar type  
NPN / PNP silicon transistor (Built-in resistor type)  
1.25  
2.1  
The following characteristics apply to both the DTr1 and  
DTr2, however, the “” sign on DTr2 values for the PNP  
type have been omitted.  
0.1Min.  
Each lead has same dimensions  
ROHM : UMT6  
EIAJ : SC-88  
Abbreviated symbol : D2  
zEquivalent circuit  
IMD2A  
EMD2 / UMD2N  
IMD2A  
(4) (5) (6)  
R
(3) (2) (1)  
R
1
R2  
1
R2  
1.6  
2.8  
DTr  
1
DTr  
1
DTr2  
DTr2  
R
1
=22kΩ  
=22kΩ  
R
1
=22kΩ  
=22kΩ  
R2  
R
2
R1  
R2  
R2  
R1  
(3) (2) (1)  
(4) (5) (6)  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT6  
EIAJ : SC-74  
zAbsolute maximum ratings (Ta = 25°C)  
Abbreviated symbol : D2  
Limits  
Parameter  
Supply voltage  
Symbol  
Unit  
V
V
CC  
50  
40  
Input voltage  
VIN  
V
10  
30  
I
O
Output current  
mA  
I
C (Max.)  
100  
1
2
EMD2, UMD2N  
150 (TOTAL)  
300 (TOTAL)  
150  
mW  
Power  
dissipation  
Pd  
IMD2A  
Junction temperature  
Storage temperature  
Tj  
˚C  
˚C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
Rev.A  
1/3  

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