Datasheet > EMBA2A06HS

EMBA2A06HS

更新时间： 2024-09-27 17:15:39

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	370K
描述
EDFN5X6

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中文翻译

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数据手册

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EMBA2A06HS 数据手册

EMBA2A06HS

Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

▪Product Summary:

▪ Pin Description:

N-CH

60V

120mΩ

180mΩ

11A

BVDSS

R_{DSON (MAX.)}@V_GS=10V

R_{DSON (MAX.)}@V_GS=4.5V

I_D@T_C=25℃

Dual N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

▪ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

LIMITS

±20

7.3

SYMBOL

UNIT

V_GS

T_C= 25 °C

T_C= 100 °C

I_D

Continuous Drain Current

Pulsed Drain Current¹

Avalanche Current

I_DM

I_AS

Avalanche Energy

L = 0.1mH

L = 0.05mH

T_C= 25 °C

1.25

0.63

EAS

EAR

Repetitive Avalanche Energy²

P_D

Power Dissipation

°C

T_C= 100 °C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

▪THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient³

SYMBOL

MAXIMUM

TYPICAL

UNIT

R_θJC

°C / W

R_θJA

62.5

¹Pulse width limited by maximum junction temperature.

²Duty cycle < 1％

³62.5°C / W when mounted on a 1 in²pad of 2 oz copper.

2019/4/22

Page. 1

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