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EMBE0N10P PDF预览

EMBE0N10P

更新时间: 2024-11-21 17:15:19
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
5页 172K
描述
SOT89-3

EMBE0N10P 数据手册

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EMBE0N10P  
NChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
100V  
500mΩ  
1.8A  
R
DSON (MAX.)  
ID  
G
S
UIS 100% Tested  
PbFree Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
1.8  
UNIT  
GateSource Voltage  
VGS  
V
TA = 25 °C  
Continuous Drain Current  
ID  
TA = 100 °C  
1.2  
A
Pulsed Drain Current1  
IDM  
7.2  
TA = 25 °C  
1.47  
Power Dissipation  
PD  
W
°C  
TA = 100 °C  
0.58  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
JunctiontoAmbient3  
35  
85  
°C / W  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
385°C / W when mounted on a 1 in2 pad of 2 oz copper.  
2013/8/30  
p.1  

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