Datasheet > EMBJ7N25J

EMBJ7N25J

更新时间： 2024-05-23 22:23:13

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
5页	170K
描述
SOT23-3

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数据手册

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EMBJ7N25J 数据手册

EMBJ7N25J

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

250V

1.7Ω

0.4A

DSON (MAX.)

Rg 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate‐Source Voltage

V_GS

T_C= 25 °C

0.4

Continuous Drain Current

I_D

T_C= 100 °C

0.25

1.6

Pulsed Drain Current¹

I_DM

T_A= 25 °C

1.25

Power Dissipation

P_D

°C

T_A= 70 °C

0.8

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

100

UNIT

Junction‐to‐ Ambient

°C / W

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

2012/8/6

p.1

12 3 4 5

中文翻译

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