Datasheet > EMBE0N10Q

EMBE0N10Q

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
5页	194K
描述
SOT223-3

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EMBE0N10Q 数据手册

EMBE0N10Q

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

100V

500mΩ

2.1A

DSON (MAX.)

UIS 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

2.1

UNIT

Gate‐Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

1.4

Pulsed Drain Current¹

I_DM

8.4

T_C= 25 °C

6.25

Power Dissipation

P_D

°C

T_C= 100 °C

2.5

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction‐to‐Case

Junction‐to‐Ambient³

°C / W

150

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³150°C / W when mounted on a 1 in²pad of 2 oz copper.

2013/8/30

p.1

12 3 4 5

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