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EMBB0N10J PDF预览

EMBB0N10J

更新时间: 2024-11-18 17:15:35
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
6页 168K
描述
SOT23-3

EMBB0N10J 数据手册

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EMBB0N10J  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
D
BVDSS  
100V  
220mΩ  
1.4A  
R
DSON (MAX.)  
I
D
G
S
Pb-Free Lead Plating & Halogen Free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±20  
1.4  
UNIT  
Gate-Source Voltage  
VGS  
V
TA = 25 °C  
Continuous Drain Current  
ID  
TA = 70 °C  
1.1  
A
Pulsed Drain Current1  
IDM  
5.6  
TA = 25 °C  
1.25  
Power Dissipation  
PD  
W
°C  
TA = 70 °C  
0.8  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
Junction-to-Ambient3  
Junction-to-Lead4  
SYMBOL  
RθJA  
TYPICAL  
MAXIMUM  
UNIT  
100  
55  
°C / W  
RθJL  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
3100°C / W when mounted on a 1 in2 pad of 2 oz copper.  
4 RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.  
2018/8/6  
p.1  

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