Datasheet > EMBE0N10JS

EMBE0N10JS

更新时间： 2024-05-23 22:22:11

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
5页	171K
描述
SOT23-3

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EMBE0N10JS 数据手册

EMBE0N10JS

N‐Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

BV^DSS

100V

500mΩ

0.9A

DSON (MAX.)

UIS 100% Tested

Pb‐Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate‐Source Voltage

V_GS

T_A= 25 °C

0.9

Continuous Drain Current

I_D

T_A= 100 °C

0.55

3.6

Pulsed Drain Current¹

I_DM

T_A= 25 °C

1.04

Power Dissipation

P_D

°C

T_A= 100 °C

0.66

Operating Junction & Storage Temperature Range

T_j, T_stg

‐55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction‐to‐Ambient³

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNIT

(

T ≤ 10sec

)

°C / W

120

(

Steady State

)

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³The device mounted on a 1 in²pad of 2 oz copper.

2015/10/19

p.1

12 3 4 5

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