Datasheet > EMBA5N10AS

EMBA5N10AS

更新时间： 2024-05-23 22:23:19

品牌	Logo	应用领域
杰力科技 - EXCELLIANCE		/
页数	文件大小	规格书
6页	423K
描述
TO252-2

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EMBA5N10AS 数据手册

EMBA5N10AS

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary:

N-CH

BVDSS

100V

135mΩ

170mΩ

10A

R_{DSON (MAX.)}@V_GS=10V

R_{DSON (MAX.)}@V_GS=4.5V

I_D@T_C=25℃

N Channel MOSFET

UIS, Rg 100% Tested

Pb-Free Lead Plating & Halogen Free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

±20

UNIT

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 100 °C

Pulsed Drain Current¹

I_DM

I_AS

Avalanche Current

L = 0.01mH

L = 1.0mH

L = 0.5mH

T_C= 25 °C

T_C= 100 °C

Avalanche Energy

E_AS

E_AR

3.0

1.5

Repetitive Avalanche Energy²

Power Dissipation

P_D

°C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNIT

Junction-to-Case

2.5

°C / W

Junction-to-Ambient

R_JA

¹Pulse width limited by maximum junction temperature.

²Duty cycle  1％

³75°C / W when mounted on a 1 in²pad of 2 oz copper.

2019/10/2

p.1

12 3 4 5 6

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