Datasheet > EMB9

EMB9

更新时间： 2023-12-06 20:03:56

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	552K
描述
SOT-563

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数据手册

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EMB9 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

Dual Digital Transistors (PNP+PNP)

EMB9

SOT-563

FEATURES

Two DTA114Y chips in a package

Mounting possible with SOT-563 automatic mounting machines

Transistor elements are independent,eliminating interference

Mouting cost and area be cut in half

Marking: B9

Absolute maximum ratings (T_a=25℃)

Symbol

V_CC

Parameter

Supply Voltage

Value

-50

Units

I_C(MAX)

V_i

Output Current

Input Voltage

-100

-40 to +6

150

P_D

Power Dissipation

Operation Junction and Storage

Temperature Range

-55~+150

℃

T_J,T_stg

Electrical Characteristics (T_a=25℃)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Input turn-on voltage

Input cut-off voltage

Output voltage

V_i(on)

V_i(off)

V_O(on)

I_i

V_O=-0.3V, I_O=-1mA

_CC=-5V, I_O=-100µA

-1.4

-0.3

I_O=-5mA, I_i=-0.25 mA

V_i=-5V

-0.3

-0.88

-0.5

Input cut-off current

Output cut-off current

DC current gain

µA

I_O(off)

G_i

V_CC=-50V, V_i=0

V_O=-5V, I_O=-5mA

V_O=-10V, I_O=5mA, f =100MHz

Transition frequency

Input resistance

f_T

250

MHz

R₁

KΩ

Resistance ratio

R_2/R₁

3.7

5.7

www.jscj-elec.com

Rev. - 2.0

12 3

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