Datasheet > EMB9N

EMB9N

更新时间： 2024-01-03 17:48:21

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	70K
描述
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中文翻译

获取价格

技术参数
数据手册

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EMB9N 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	Is Samacsys：	N
Base Number Matches：	1

EMB9N 数据手册

EMB9 / UMB9N / IMB9A

Transistors

General purpose

(dual digital transistors)

EMB9 / UMB9N / IMB9A

!Features

!External dimensions (Units : mm)

1) Two DTA144Ys in a EMT or UMT or SMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

3) Transistor elements are independent, eliminating

interference.

EMB9

( )

1.2

1.6

4) Mounting cost and area can be cut in half.

Each lead has same dimensions

ROHM : EMT6

UMB9N

Abbreviated symbol : B9

!Structure

Epitaxial planar type

PNP silicon transistor (Built-in resistor type)

1.25

2.1

The following characteristics apply to both DTr1 and

DTr2.

0.1Min.

Each lead has same dimensions

ROHM : UMT6

EIAJ : SC-88

!Equivalent circuit

Abbreviated symbol : B9

EMB9 / UMB9N

IMB9A

(4) (5) (6)

(3) (2) (1)

DTr

DTr1

DTr2

=10kΩ

=47kΩ

=10kΩ

=47kΩ

1.6

2.8

(3) (2) (1)

(4) (5) (6)

0.3to0.6

Each lead has same dimensions

ROHM : SMT6

EIAJ : SC-74

!Absolute maximum ratings (Ta = 25°C)

Limits

Parameter

Symbol

Unit

Abbreviated symbol : B9

Supply voltage

−50

−40

Input voltage

VIN

−70

−100

Output current

C (Max.)

∗

EMB9, UMB9N

150 (TOTAL)

300 (TOTAL)

150

Power

dissipation

IMB9A

Junction temperature

Storage temperature

˚C

Tstg

−55∼+150

1 120mW per element must not be exceeded.

2 200mW per element must not be exceeded.

∗

中文翻译

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