Datasheet > EM6A9320BIB-4IH

EM6A9320BIB-4IH

更新时间： 2022-02-26 13:08:28

品牌	Logo	应用领域
钰创 - ETRON		动态存储器双倍数据速率
页数	文件大小	规格书
61页	502K
描述
4M x 32 bit DDR Synchronous DRAM (SDRAM)

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数据手册

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EM6A9320BIB-4IH 数据手册

EM6A9320BIB

EtronTech

Figure 39. Write without Auto Precharge

t_CK

t_CHt_CL

t_IH

t_IS

t_IH

CKE

VALID

t_ISt_IH

WRITE

NOP

PRE

NOP

ACT

NOP

COMMAND

A0-A7

t_ISt_IH

Col n

A9-A11

t_ISt_IH

ALL BANKS

ONE BANKS

DIS AP

t_ISt_IH

Bank X

*Bank X

BA0,BA1

Case 1:

t_RP

t_DSH

t_DQSH

t_DSH

t_DQSS

t_WR

t_DQSS=min

t_WPST

DQS

t_DQSL

t_WPRES

t_WPRE

t_DSS

t_DQSH

t_DSS

t_WPST

Case 2:

t_DQSS=max

t_DQSS

DQS

t_WPRES

t_DQSL

t_WPRE

DI n = Data In from column n

Burst Length = 4 in the case shown

3 subsequent elements of Data In are provided in the programmed order following DI n

DIS AP = Disable Autoprecharge

*= Don't Care , if A8 is HIGH at this point

PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH

NOP commands are shown for ease of illustration; other commands may be valid at these times

Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the +

25% window of the corresponding positive clock edge

Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks

Don’t Care

Etron Confidential

Rev 1.0

July /2012

1...54 55 565758 59 60 61

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