EM6AA160TSA
EtronTech
16M x 16 bit DDR Synchronous DRAM (SDRAM)
Etron Confidential
Preliminary (Rev. 1.2 May. / 2009)
Table 1.Ordering Information
Features
Clock
Frequency
Fast clock rate: 250/200MHz
•
•
Part Number
Data Rate Package
Differential Clock CK &
Bi-directional DQS
CK
EM6AA160TSA-4G 250MHz 500Mbps/pin TSOPII
•
•
•
•
•
•
EM6AA160TSA-5G 200MHz 400Mbps/pin TSOPII
TS: indicates TSOP II package
DLL enable/disable by EMRS
Fully synchronous operation
Internal pipeline architecture
Four internal banks, 4M x 16-bit for each bank
Programmable Mode and Extended Mode registers
- CAS Latency: 2.5, 3
G: indicates Pb free and Halogen free
A: indicates Generation Code
Figure 1. Pin Assignment (Top View)
- Burst length: 2, 4, 8
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
1
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
2
- Burst Type: Sequential & Interleaved
Individual byte write mask control
DM Write Latency = 0
Auto Refresh and Self Refresh
8192 refresh cycles / 64ms
Precharge & active power down
Power supplies: VDD & VDDQ = 2.5V ± 5%
Interface: SSTL_2 I/O Interface
Package: 66 Pin TSOP II, 0.65mm pin pitch
- Pb free and Halogen free
3
•
•
•
•
•
•
•
•
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
Overview
VDDQ
LDQS
NC
VDD
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
CK
The EM6AA160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256 Mbits.
It is internally configured as a quad 4M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs occur
LDM
WE
at both rising edges of CK and
.d Read and write
CK
accesses to the SDRAM are burst oriented; accesses start
at a selected location and continue for a programmed
number of locations in a programmed sequence. Accesses
begin with the registration of a BankActivate command
which is then followed by a Read or Write command. The
EM6AA160 provides programmable Read or Write burst
lengths of 2, 4, or 8. An auto precharge function may be
enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. The refresh
functions, either Auto or Self Refresh are easy to use. In
addition, EM6AA160 features programmable DLL option.
By having a programmable mode register and extended
mode register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to high
performance main memory and graphics applications.
CAS
RAS
CS
CK
CKE
NC
NC
A12
BA0
BA1
A10/AP
A0
A11
A9
A8
A7
A6
A1
A2
A5
A3
A4
VDD
VSS
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
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