Datasheet > EM6AA160TS-4G

EM6AA160TS-4G

更新时间： 2022-12-28 03:30:51

品牌	Logo	应用领域
钰创 - ETRON		动态存储器双倍数据速率
页数	文件大小	规格书
51页	401K
描述
16M x 16 bit DDR Synchronous DRAM (SDRAM)

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EM6AA160TS-4G 数据手册

EM6AA160TS

EtronTech

16M x 16 bit DDR Synchronous DRAM (SDRAM)

Etron Confidential

(Rev. 0.7 July/ 2008)

Overview

Features

The EM6AA160 SDRAM is a high-speed CMOS

Fast clock rate: 250/200MHz

•

double data rate synchronous DRAM containing 256

Mbits. It is internally configured as a quad 4M x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal,

CK). Data outputs occur at both rising edges of CK

Differential Clock CK &

Bi-directional DQS

•

DLL enable/disable by EMRS

Fully synchronous operation

Internal pipeline architecture

Four internal banks, 4M x 16-bit for each bank

Programmable Mode and Extended Mode registers

- CAS Latency: 3

and

.d Read and write accesses to the SDRAM

are burst oriented; accesses start at a selected

location and continue for a programmed number of

locations in a programmed sequence. Accesses

begin with the registration of a BankActivate

command which is then followed by a Read or Write

command. The EM6AA160 provides programmable

Read or Write burst lengths of 2, 4, or 8. An auto

precharge function may be enabled to provide a

self-timed row precharge that is initiated at the end

of the burst sequence. The refresh functions, either

Auto or Self Refresh are easy to use. In addition,

- Burst length: 2, 4, 8

- Burst Type: Sequential & Interleaved

Individual byte write mask control

DM Write Latency = 0

Auto Refresh and Self Refresh

8192 refresh cycles / 64ms

•

Precharge & active power down

EM6AA160 features

programmable DLL option.

Power supplies:

•

By having a programmable mode register and

extended mode register, the system can choose the

most suitable modes to maximize its performance.

These devices are well suited for applications

requiring high memory bandwidth, result in a device

particularly well suited to high performance main

memory and graphics applications.

VDD = 2.5V 5%

VDDQ = 2.5V 5%

Interface: SSTL_2 I/O Interface

Package: 66 Pin TSOP II, 0.65mm pin pitch

- Pb and Halogen free

•

Table 1. Ordering Information

Part Number

EM6AA160TS-4G

EM6AA160TS-5G

Clock Frequency

Data Rate

Power Supply

Package

TSOPII

250MHz

500Mbps/pin V_DD2.5V V_DDQ2.5V

400Mbps/pin V_DD2.5V V_DDQ2.5V

200MHz

TS : indicates TSOPII package

G: indicates Pb and Halogen free

Etron Technology, Inc.

No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc. reserves the right to change products or specification without notice.

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