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EM6AA160BKC-5H

更新时间: 2022-02-26 11:43:43
品牌 Logo 应用领域
钰创 - ETRON 动态存储器双倍数据速率
页数 文件大小 规格书
63页 481K
描述
16M x 16 bit DDR Synchronous DRAM (SDRAM)

EM6AA160BKC-5H 数据手册

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EtronTech  
EM6AA160  
16M x 16 bit DDR Synchronous DRAM (SDRAM)  
Etron Confidential  
Preliminary (Rev. 1.3, Mar. /2014)  
Features  
Overview  
Fast clock rate: 250/200MHz  
The EM6AA160 SDRAM is a high-speed CMOS  
double data rate synchronous DRAM containing 256  
Mbits. It is internally configured as a quad 4M x 16  
DRAM with a synchronous interface (all signals are  
registered on the positive edge of the clock signal,  
CK). Data outputs occur at both rising edges of CK  
Differential Clock CK &  
Bi-directional DQS  
CK  
DLL enable/disable by EMRS  
Fully synchronous operation  
Internal pipeline architecture  
Four internal banks, 4M x 16-bit for each bank  
Programmable Mode and Extended Mode registers  
- CAS Latency: 2, 2.5, 3  
and  
. Read and write accesses to the SDRAM  
CK  
are burst oriented; accesses start at a selected  
location and continue for a programmed number of  
locations in a programmed sequence. Accesses  
begin with the registration of a BankActivate  
command which is then followed by a Read or Write  
command. The EM6AA160 provides programmable  
Read or Write burst lengths of 2, 4, or 8. An auto  
precharge function may be enabled to provide a self-  
timed row precharge that is initiated at the end of the  
burst sequence. The refresh functions, either Auto or  
Self Refresh are easy to use. In addition, EM6AA160  
- Burst length: 2, 4, 8  
- Burst Type: Sequential & Interleaved  
Individual byte write mask control  
DM Write Latency = 0  
Auto Refresh and Self Refresh  
8192 refresh cycles / 64ms  
Precharge & active power down  
Power supplies: VDD & VDDQ = 2.5V ± 0.2V  
Interface: SSTL_2 I/O Interface  
Package: 66 Pin TSOP II, 0.65mm pin pitch  
- Pb free and Halogen free  
features  
programmable DLL option. By having a  
programmable mode register and extended mode  
register, the system can choose the most suitable  
modes to maximize its performance. These devices  
are well suited for applications requiring high  
memory bandwidth, result in a device particularly  
well suited to high performance main memory and  
graphics applications.  
Package: 60-Ball, 8x13x1.2 mm (max) TFBGA  
- Pb free and Halogen Free  
Table 1. Ordering Information  
Part Number  
Clock Frequency  
Data Rate  
Package  
EM6AA160TSC-4G  
EM6AA160TSC-5G  
EM6AA160BKC-4H  
EM6AA160BKC-5H  
250MHz  
200MHz  
250MHz  
200MHz  
500Mbps/pin  
400Mbps/pin  
500Mbps/pin  
400Mbps/pin  
TSOPII  
TSOPII  
TFBGA  
TFBGA  
TS: indicates TSOP II Package  
BK: indicates TFBGA Package  
C: indicates Generation Code  
G: indicates Pb free and Halogen Free for TSOPII Package  
H: indicates Pb free and Halogen Free for TFBGA Package  
Etron Technology, Inc.  
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.  
TEL: (886)-3-5782345  
FAX: (886)-3-5778671  
Etron Technology, Inc. reserves the right to change products or specification without notice.  

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