Datasheet > EM6A9320BIB-4IH

EM6A9320BIB-4IH

更新时间： 2022-02-26 13:08:28

品牌	Logo	应用领域
钰创 - ETRON		动态存储器双倍数据速率
页数	文件大小	规格书
61页	502K
描述
4M x 32 bit DDR Synchronous DRAM (SDRAM)

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中文翻译

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数据手册

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EM6A9320BIB-4IH 数据手册

EM6A9320BIB

EtronTech

Figure 38. Bank Read Access

t_CK

t_CHt_CL

t_ISt_IH

CKE

t_ISt_IH

NOP

ACT

NOP

READ

Col n

PRE

NOP

ACT

COMMAND

A0-A7

t_ISt_IH

A9-A11

t_ISt_IH

ALL BANKS

ONE BANKS

DIS AP

t_IS

t_IH

Bank X

*Bank X

BA0,BA1

t_RC

t_RAS

CL=3

t_RCD

t_RP

Case 1:

t_DQSCK

min

t_AC/t_DQSCK=min

t_RPST

t_RPRE

DQS

t_LZ

min

t_LZ

t_AC

min

Case 2:

t_AC/t_DQSCK=max

t_DQSCK

max

t_RPST

t_RPRE

DQS

t_HZ

max

t_LZ

max

t_LZ

t_AC

max

DO n = Data Out from column n

Burst Length = 4 in the case shown

3 subsequent elements of Data Out are provided in the programmed order following DO n

DIS AP = Disable Autoprecharge

* = Don't Care , if A8 is HIGH at this point

PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address

NOP commands are shown for ease of illustration; other commands may be valid at these times

Note that tRCD > tRCD MIN so that the same timing applies if Autoprecharge is enabled (in which case tRAS

would be limiting)

Don’t Care

Etron Confidential

Rev 1.0

July /2012

1...53 54 555657 58 59...61

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