Datasheet > EM6A9320BIB-4IH

EM6A9320BIB-4IH

更新时间： 2022-02-26 13:08:28

品牌	Logo	应用领域
钰创 - ETRON		动态存储器双倍数据速率
页数	文件大小	规格书
61页	502K
描述
4M x 32 bit DDR Synchronous DRAM (SDRAM)

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EM6A9320BIB-4IH 数据手册

EM6A9320BIB

EtronTech

Table 13. Absolute Maximum Rating

Rating

-4I/5I

Symbol

Item

Unit

Note

V_IN, V_OUT

V_DD, V_DDQ

T_A

- 0.5 ~ V_DDQ+0.5

-1 ~ 3.6

-40~85

- 55~150

260

1,2

Input, Output Voltage

Power Supply Voltage

Ambient Temperature

Storage Temperature

Soldering Temperature (10s)

Power Dissipation

T_STG

T_SOLDER

P_D

2.0

I_OS

Short Circuit Output Current

Note1: Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage of the

devices

Note2: These voltages are relative to Vss

Table 14. Recommended D.C. Operating Conditions

(SSTL_2 In/Out, T_A= -40 ~ 85 °C)

Symbol

Parameter

Power Supply Voltage

Min.

Max.

Unit

Note

V_DD

2.3

2.7

V_DDQ

2.3

2.7

Power Supply Voltage(for I/O )

V_REF

V_TT

0.49 x V_DDQ0.51 x V_DDQ

Input Reference Voltage

Termination Voltage

Input High Voltage

V_REF– 0.04

V_REF+ 0.15

V_SSQ- 0.3

- 2

V_REF+ 0.04

V_IH(DC)

V_IL(DC)

I_IL

V_DDQ+ 0.3

V_REF- 0.15

Input Low Voltage

µA

Input Leakage Current

Output Leakage Current

Output High Current

Output Low Current

I_OZ

- 5

I_OH

-16.2

V_OH= 1.95V

V_OL= 0.35V

I_OL

16.2

Table 15. Capacitance

(V_DD= 2.5V, f = 1MHz, T_A= 25 °C)

Parameter

Symbol

Min.

Max.

Unit

C_IN1

Input Capacitance (CK,

)

1.5

2.5

C_IN2

C_I/O

Input Capacitance (All other input-only pins)

DM, DQ, DQS Input/Output Capacitance

1.5

3.5

2.5

4.5

Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested.

Table 16. Decoupling Capacitance Guide Line

Symbol

Parameter

Value

Unit

µF

C_DC1Decouping Capacitance between V_DDand V_SS

C_DC2Decouping Capacitance between V_DDQand V_SSQ

0.1+0.01

µF

Etron Confidential

Rev 1.0

July /2012

1...7 8 91011 12 13...61

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