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EGP50F-HE3/73 PDF预览

EGP50F-HE3/73

更新时间： 2024-11-03 03:05:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 76K
描述
DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, GP20, 2 PIN, Rectifier Diode

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中文翻译

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EGP50F-HE3/73 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：ROHS COMPLIANT, PLASTIC, GP20, 2 PIN
针数：2Reach Compliance Code：unknown
风险等级：5.82

EGP50F-HE3/73 数据手册

 浏览型号EGP50F-HE3/73的Datasheet PDF文件第2页浏览型号EGP50F-HE3/73的Datasheet PDF文件第3页浏览型号EGP50F-HE3/73的Datasheet PDF文件第4页 
EGP50A thru EGP50G  
Vishay General Semiconductor  
Glass Passivated Ultrafast Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Cavity-free glass-passivated junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
SUPERECTIFIER®  
• Low leakage current  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
GP20  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
5.0 A  
VRRM  
IFSM  
trr  
50 V to 400 V  
150 A  
MECHANICAL DATA  
Case: GP20, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
50 ns  
VF  
0.95 V, 1.25 V  
150 °C  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TL = 55 °C  
IF(AV)  
5
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
150  
A
Operating and storage temperature range  
TJ, TSTG  
- 65 to + 150  
°C  
Document Number: 88585  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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