Datasheet > EGP50F-HE3/73

EGP50F-HE3/73

更新时间： 2024-02-15 12:25:57

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	76K
描述
DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, GP20, 2 PIN, Rectifier Diode

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技术参数
数据手册

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EGP50F-HE3/73 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	ROHS COMPLIANT, PLASTIC, GP20, 2 PIN
针数：	2	Reach Compliance Code：	unknown
风险等级：	5.82

EGP50F-HE3/73 数据手册

EGP50A thru EGP50G

Vishay General Semiconductor

Glass Passivated Ultrafast Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

SUPERECTIFIER^®

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

GP20

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

5.0 A

V_RRM

I_FSM

t_rr

50 V to 400 V

150 A

MECHANICAL DATA

Case: GP20, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

50 ns

V_F

0.95 V, 1.25 V

150 °C

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

300

210

300

400

280

400

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T_L= 55 °C

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

150

Operating and storage temperature range

T_J, T_STG

- 65 to + 150

°C

Document Number: 88585

Revision: 15-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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