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EGP50G/90 PDF预览

EGP50G/90

更新时间: 2024-11-07 19:41:03
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
3页 186K
描述
Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, PLASTIC, GP20, 2 PIN

EGP50G/90 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e0
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.05 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

EGP50G/90 数据手册

 浏览型号EGP50G/90的Datasheet PDF文件第2页浏览型号EGP50G/90的Datasheet PDF文件第3页 
EGP50A thru EGP50G  
Vishay Semiconductors  
Glass Passivated Ultrafast Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
5.0 A  
50 V to 400 V  
150 A  
50 ns  
*
VF  
0.95 V, 1.25 V  
150 °C  
d
e
t
n
e
t
Tj max.  
a
P
*Glass Encapsulation  
GP20  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly to  
Patent No. 3,930,306  
Features  
Mechanical Data  
• Cavity-free glass-passivated junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
Case: GP20, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer and Telecommuni-  
cation  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G  
Unit  
V
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
Maximum RMS voltage  
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TL = 55 °C  
IF(AV)  
5
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
150  
A
Operating and storage temperature range  
TJ,TSTG  
- 65 to + 150  
°C  
Document Number 88585  
10-Aug-05  
www.vishay.com  
1

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