Datasheet > EGP50K

EGP50K

更新时间： 2024-11-02 12:56:55

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	274K
描述
5A plug-in fast recovery diode 800V DO-201 series

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中文翻译

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数据手册

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EGP50K 数据手册

EGP50A - EGP50M

GLASS PASSIVATED FAST EFFICIENT DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 5.0 A

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: DO-201AD, Molded Plastic

DO-201AD

Min

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

Dim

Max

—

25.40

8.50

9.53

1.06

5.21

0.96

Marking: Type Number

4.80

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

EGP

50A

EGP

50B

EGP

50D

EGP

50F

EGP

50G

EGP

50J

EGP

50K

EGP

50M

Characteristic

Symbol

Unit

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

200

140

300

210

400

280

600

420

800

560

1000

700

R(RMS)

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

5.0

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

150

Forward Voltage

@I_F= 5.0A

1.0

1.3

1.7

Peak Reverse Current

@T_A= 25°C

100

µA

At Rated DC Blocking Voltage @T_A= 100°C

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Operating Temperature Range

°C

-65 to +125

-65 to +150

STG

Storage Temperature Range

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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