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EGP50G-E3/23 PDF预览

EGP50G-E3/23

更新时间: 2024-11-07 14:49:31
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 88K
描述
Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GP20, 2 PIN

EGP50G-E3/23 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.61
其他特性:LOW LEAKAGE CURRENT, FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.05 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

EGP50G-E3/23 数据手册

 浏览型号EGP50G-E3/23的Datasheet PDF文件第2页浏览型号EGP50G-E3/23的Datasheet PDF文件第3页浏览型号EGP50G-E3/23的Datasheet PDF文件第4页 
EGP50A thru EGP50G  
Vishay General Semiconductor  
Glass Passivated Ultrafast Rectifier  
FEATURES  
• Cavity-free glass-passivated junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
• Low leakage current  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
*Glass Encapsulation  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly to  
Patent No. 3,930,306  
GP20  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification and free-  
wheeling application in switching mode converters  
and inverters for consumer, computer and  
telecommunication.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
trr  
5.0 A  
50 V to 400 V  
150 A  
MECHANICAL DATA  
Case: GP20, molded epoxy over glass body  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
50 ns  
VF  
0.95 V, 1.25 V  
150 °C  
Tj max.  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL EGP50A EGP50B EGP50C EGP50D EGP50F EGP50G  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
V
V
V
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TL = 55 °C  
IF(AV)  
5
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
150  
A
Operating and storage temperature range  
TJ, TSTG  
- 65 to + 150  
°C  
Document Number 88585  
17-May-06  
www.vishay.com  
1

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