Photomicrosensor (Transmissive)
EE-SX1042
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• 14.5-mm-tall model with a deep slot.
• PCB mounting type.
Four, C0.3
• High resolution with a 0.5-mm-wide aperture.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25° C)
0.5 0.05
Item
Symbol
Rated value
50 mA (see note 1)
1 A (see note 2)
4 V
Emitter
Forward current
IF
Pulse forward current IFP
14.5
12 0.4
Reverse voltage
VR
Detector
Collector–Emitter
voltage
VCEO
30 V
5 min.
Emitter–Collector
voltage
VECO
---
Four, 0.25
(11.2)
(1.92)
Collector current
IC
20 mA
Collector
dissipation
PC
100 mW
(see note 1)
Cross section AA
Ambient
Operating
Storage
Topr
Tstg
Tsol
–25°C to 85°C
–30°C to 100° C
260°C (see note
3)
temperature
Internal Circuit
Soldering temperature
K
A
C
E
Unless otherwise specified, the
tolerances are as shown below.
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
Dimensions
Tolerance
3 mm max.
0.3
2. The pulse width is 10 µs maximum with a frequency of
Terminal No.
Name
100 Hz.
3 < mm ≤ 6
6 < mm ≤ 10
0.375
0.45
A
K
C
E
Anode
3. Complete soldering within 10 seconds.
Cathode
Collector
Emitter
10 < mm ≤ 18
18 < mm ≤ 30
0.55
0.65
■ Ordering Information
Description
Model
EE-SX1042
Photomicrosensor (transmissive)
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Symbol
Value
Condition
Emitter
Forward voltage
VF
IR
1.2 V typ., 1.5 V max.
IF = 30 mA
VR = 4 V
Reverse current
Peak emission wavelength
Light current
0.01 µA typ., 10 µA max.
940 nm typ.
λP
IL
IF = 20 mA
Detector
0.5 mA min., 10 mA max.
2 nA typ., 200 nA max.
---
IF = 20 mA, VCE = 10 V
VCE = 10 V, 0 lx
---
Dark current
ID
Leakage current
ILEAK
Collector–Emitter saturated
voltage
VCE (sat)
0.1 V typ., 0.4 V max.
IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity
wavelength
λP
850 nm typ.
VCE = 10 V
Rising time
Falling time
tr
tf
4 µs typ.
4 µs typ.
VCC = 5 V, RL = 100 Ω, IL = 5 mA
VCC = 5 V, RL = 100 Ω, IL = 5 mA
Photomicrosensor (Transmissive) EE-SX1042
1