Photomicrosensor (Transmissive)
EE-SX1131
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Features
• Ultra-compact with a 5-mm-wide sensor and a 2-mm-wide slot.
• PCB surface mounting type.
• High resolution with a 0.3-mm-wide aperture.
• Dual-channel output.
• RoHS Compliant.
■ Absolute Maximum Ratings (Ta = 25° C)
Item
Symbol
Rated value
Emitter
Forward current
IF
25 mA (see note 1)
100 mA (see note 2)
Pulse forward
current
IFP
Reverse voltage
VR
5 V
Optical
axis
Detector
Collector–Emitter
voltage
VCEO
20 V
Emitter–Collector
voltage
VECO
5 V
Cross section AA
Collector current
IC
20 mA
Recommended Soldering Pattern
Internal Circuit
Collector
dissipation
PC
75 mW (see note 1)
Ambient
temperature
Operating
Storage
Reflow soldering
Manual soldering
Topr
Tstg
Tsol
Tsol
–30°C to 85°C
–40°C to 90°C
240°C (see note 3)
300°C (see note 3)
Terminal No.
Name
Anode
A
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
NC
K
C
Not connected.
Cathode
Collector
Unless otherwise specified, the
tolerances are 0.15 mm.
2. Duty: 1/100; Pulse width: 0.1 ms
3. Complete soldering within 10 seconds for reflow soldering
E1
E2
Emitter 1
Emitter 2
and within 3 seconds for manual soldering.
■ Ordering Information
Description
Model
EE-SX1131
Photomicrosensor (transmissive)
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Forward voltage
Reverse current
Symbol
Value
1.1 V typ., 1.3 V max.
10 µA max.
Condition
Emitter
VF
IR
IF = 5 mA
VR = 5 V
Peak emission wavelength
Light current
λP
940 nm typ.
IF = 20 mA
Detector
IL1/IL2
50 µA min., 150 µA typ.,
500 µA max.
IF = 5 mA, VCE = 5 V
Dark current
ID
100 nA max.
VCE = 10 V, 0 lx
Leakage current
ILEAK
---
---
Collector–Emitter saturated voltage
Peak spectral sensitivity wavelength
VCE (sat)
0.1 V typ., 0.4 V max.
900 nm typ.
IF = 20 mA, IL = 50 µA
λP
---
Rising time
Falling time
tr
10 s typ.
VCC = 5 V, R = 1 k ,
IL = 100 µA
µ
Ω
L
tf
10 µs typ.
VCC = 5 V, RL = 1 kΩ,
IL = 100 µA
Photomicrosensor (Transmissive) EE-SX1131
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