Datasheet > EESX1140

EESX1140

更新时间： 2022-05-10 11:13:42

品牌	Logo	应用领域
欧姆龙 - OMRON		光电
页数	文件大小	规格书
2页	81K
描述
Photomicrosensor (Transmissive)

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数据手册

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EESX1140 数据手册

E^PhE^oto-^mS^icX^ros1^en1^s4^or0^{(Transmissive)}

Be sure to read Precautions on page 25.

■ Dimensions

Note: All units are in millimeters unless otherwise indicated.

■ Features

• General-purpose model with a 14-mm-wide slot.

• 16.3-mm-tall model with a deep slot.

• PCB mounting type.

Four, C0.3

Four, 0.8

3.2 ^0.1dia. through-hole

■ Absolute Maximum Ratings (Ta = 25°C)

Four, 0.8

Item

Symbol

I_F

Rated value

Emitter

Forward current

50 mA

(see note 1)

1.5

0.2

Pulse forward cur- I_FP

rent

1 A

(see note 2)

Optical

axis

Reverse voltage

V_R

4 V

16.3

Detector

Collector–Emitter

voltage

V_CEO

30 V

(13.5)

12.5 0.15

5.2

2.8

Emitter–Collector

voltage

V_ECO

---

4.5 0.5

Collector current

I_C

20 mA

Four, 0.5

(2.5)

Collector dissipa-

tion

P_C

100 mW

Four, 0.25

(19.9)

(2.5)

Cross section BB

(see note 1)

Cross section AA

Ambient tem- Operating

Topr

Tstg

–25°C to 85°C

–30°C to

100°C

260°C

(see note 3)

perature

Storage

Internal Circuit

Soldering temperature

Tsol

Unless otherwise specified, the

tolerances are as shown below.

Note: 1. Refer to the temperature rating chart if the ambient temper-

ature exceeds 25°C.

Dimensions

3 mm max.

Tolerance

2. The pulse width is 10 μs maximum with a frequency of

0.3

100 Hz.

Terminal No.

Name

3 < mm ≤ 6

6 < mm ≤ 10

0.375

0.45

3. Complete soldering within 10 seconds.

Anode

Cathode

Collector

Emitter

10 < mm ≤ 18

18 < mm ≤ 30

0.55

0.65

■ Electrical and Optical Characteristics (Ta = 25°C)

Item

Symbol

Value

1.2 V typ., 1.5 V max.

0.01 μA typ., 10 μA max.

940 nm typ.

Condition

Emitter

Forward voltage

Reverse current

Peak emission wavelength

Light current

V_F

I_R

I_F= 30 mA

V_R= 4 V

λ_P

I_L

I_F= 20 mA

Detector

0.4 mA min.

I_F= 20 mA, V_CE= 10 V

V_CE= 10 V, 0 lx

---

Dark current

I_D

2 nA typ., 200 nA max.

---

Leakage current

I_LEAK

Collector–Emitter saturated volt-

age

_CE(sat)

0.1 V typ., 0.4 V max.

I_F= 20 mA, I_L= 0.1 mA

Peak spectral sensitivity wave-

length

λ_P

850 nm typ.

V_CE= 10 V

Rising time

Falling time

4 μs typ.

V_CC= 5 V, R_L= 100 Ω, I_L= 5 mA

EE-SX1140 Photomicrosensor (Transmissive)

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