EE-SX1108

更新时间： 2024-02-07 08:39:05

品牌	Logo	应用领域
欧姆龙 - OMRON		光电开关插槽式开关输出元件
页数	文件大小	规格书
6页	767K
描述
Photomicrosensor (Transmissive)

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技术参数
数据手册

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EE-SX1108 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	ROHS COMPLIANT PACKAGE-4
Reach Compliance Code：	unknown	风险等级：	5.79
Is Samacsys：	N	Coll-Emtr Bkdn Voltage-Min：	20 V
配置：	SINGLE	最大暗电源：	100 nA
最大正向电流：	0.025 A	JESD-609代码：	e1
功能数量：	1	标称通态集电极电流：	0.15 mA
最高工作温度：	85 °C	最低工作温度：	-30 °C
光电设备类型：	TRANSISTOR OUTPUT SLOTTED SWITCH	标称槽宽：	2 mm
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	Base Number Matches：	1

EE-SX1108 数据手册

Photomicrosensor (Transmissive)

EE-SX1108

■ Dimensions

■ Features

• Ultra-compact with a 5-mm-wide sensor and a 1-mm-wide slot.

• PCB surface mounting type.

Note: All units are in millimeters unless otherwise indicated.

• High resolution with a 0.3-mm-wide aperture.

• RoHS Compliant.

■ Absolute Maximum Ratings (Ta = 25° C)

Item

Symbol

Rated value

Emitter

Forward current

Pulse forward

current

I_F

25 mA (see note 1)

100 mA (see note 2)

I_FP

Reverse voltage

V_R

5 V

Detector

Collector–Emitter

voltage

V_CEO

20 V

Optical

axis

Emitter–Collector

voltage

V_ECO

5 V

Collector current

Collector

I_C

20 mA

Cross section AA

P_C

75 mW (see note 1)

dissipation

Operating

Storage

Recommended

Soldering Pattern

Ambient

temperature

Topr

Tstg

Tsol

–30°C to 85°C

–40°C to 90°C

240°C (see note 3)

300°C (see note 3)

Internal Circuit

Reflow soldering

Manual soldering

Note: 1. Refer to the temperature rating chart if the ambient temper-

ature exceeds 25°C.

Terminal No. Name

Anode

2. Duty: 1/100; Pulse width: 0.1 ms

Cathode

Collector

Emitter

3. Complete soldering within 10 seconds for reflow soldering

Unless otherwise specified, the

tolerances are 0.15 mm.

and within 3 seconds for manual soldering.

■ Ordering Information

Description

Model

EE-SX1108

Photomicrosensor (transmissive)

■ Electrical and Optical Characteristics (Ta = 25°C)

Item

Symbol

Value

Condition

Emitter

Forward voltage

V_F

I_R

1.1 V typ., 1.3 V max.

I_F= 5 mA

V_R= 5 V

Reverse current

10 µA max.

Peak emission wavelength

Light current

λ_P

I_L

940 nm typ.

I_F= 20 mA

Detector

50 µA min., 150 µA typ.,

500 µA max.

I_F= 5 mA, V_CE= 5 V

Dark current

I_D

100 nA max.

V_CE= 10 V, 0 lx

Leakage current

I_LEAK

---

Collector–Emitter saturated voltage

Peak spectral sensitivity wavelength

V_CE(sat)

0.1 V typ., 0.4 V max.

900 nm typ.

10 µs typ.

I_F= 20 mA, I_L= 50 µA

λ_P

---

Rising time

Falling time

V_CC= 5 V, R_L= 1 kΩ,

I_L= 100 µA

10 µs typ.

V_CC= 5 V, R_L= 1 kΩ,

I_L= 100 µA

Photomicrosensor (Transmissive) EE-SX1108

12 3 4 5 6

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