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EDS6416AHBH-75TT-E PDF预览

EDS6416AHBH-75TT-E

更新时间: 2024-02-25 12:20:42
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器
页数 文件大小 规格书
49页 647K
描述
64M bits SDRAM WTR (Wide Temperature Range)

EDS6416AHBH-75TT-E 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:60
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.81
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PBGA-B60长度:10.1 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:60
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-20 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态:Not Qualified座面最大高度:1.1 mm
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.65 mm端子位置:BOTTOM
宽度:6.4 mmBase Number Matches:1

EDS6416AHBH-75TT-E 数据手册

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DATA SHEET  
64M bits SDRAM  
WTR (Wide Temperature Range)  
EDS6416AHBH-TT (4M words × 16 bits)  
Specifications  
Pin Configurations  
Density: 64M bits  
Organization  
/xxx indicate active low signal.  
60-ball FBGA  
1M words × 16 bits × 4 banks  
Package: 60-ball FBGA  
1
2
3
4
5
6
7
A
Lead-free (RoHS compliant)  
Power supply: VDD, VDDQ = 3.3V ± 0.3V  
Clock frequency: 133MHz (max.)  
Four internal banks for concurrent operation  
Interface: LVTTL  
Burst lengths (BL): 1, 2, 4, 8, full page  
Burst type (BT):  
Sequential (1, 2, 4, 8, full page)  
Interleave (1, 2, 4, 8)  
VSS DQ15  
DQ0  
VDD  
B
C
D
DQ14 VSSQ  
DQ13 VDDQ  
DQ12 DQ11  
VDDQ DQ1  
VSSQ DQ2  
DQ4  
DQ3  
E
F
DQ10 VSSQ  
DQ9 VDDQ  
VDDQ DQ5  
VSSQ DQ6  
/CAS Latency (CL): 2, 3  
G
DQ8  
NU  
NU  
NU  
DQ7  
NU  
Precharge: auto precharge operation for each burst  
access  
H
J
VSS  
VDD  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 4096 cycles/64ms  
Average refresh period: 15.6μs  
Operating ambient temperature range  
TA = –20°C to +85°C  
NU UDQM  
LDQM /WE  
/RAS /CAS  
K
L
NU  
CKE  
A11  
A8  
CLK  
NU  
A9  
NC  
BA1  
A0  
/CS  
BA0  
A10  
A1  
Features  
M
N
P
Single pulsed /RAS  
Burst read/write operation and burst read/single write  
operation capability  
A7  
A6  
A5  
A2  
Byte control by UDQM and LDQM  
Wide temperature range  
R
VSS  
A4  
A3  
VDD  
TA = –20°C to +85°C  
(Top view)  
A0 to A11  
BA0, BA1  
DQ0 to DQ15  
/CS  
/RAS  
/CAS  
Address input  
CKE  
CLK  
Clock enable  
Clock input  
Bank select address  
Data-input/output  
Chip select  
Row address strobe  
Column address strobe  
Write enable  
VDD  
VSS  
VDDQ  
VSSQ  
NC*1  
NU*2  
Power for internal circuit  
Ground for internal circuit  
Power for DQ circuit  
Ground for DQ circuit  
No connection  
/WE  
LDQM, UDQM  
Input/output mask  
Not usable  
Notes:1. Not internally connected.  
2. Don't connect. Internally connected.  
Document No. E0718E20 (Ver. 2.0)  
Date Published December 2005 (K) Japan  
This product became EOL in April, 2007.  
Printed in Japan  
URL: http://www.elpida.com  
©Elpida Memory, Inc. 2005  

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