是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP, DIP32,.6 | 针数: | 32 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.B |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.07 |
Is Samacsys: | N | 最长访问时间: | 15 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-CDIP-T32 |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX8 | 输出特性: | 3-STATE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DIP |
封装等效代码: | DIP32,.6 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
认证状态: | Not Qualified | 最大待机电流: | 0.002 A |
最小待机电流: | 2 V | 子类别: | SRAMs |
最大压摆率: | 0.3 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88130LPS15CM | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 |
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EDI88130LPS15FB | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CDFP32, CERAMIC, FP-32 |
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EDI88130LPS15FC | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CDFP32, CERAMIC, FP-32 |
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EDI88130LPS15L32C | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CQCC32, CERAMIC, LCC-32 |
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EDI88130LPS15L32I | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CQCC32, CERAMIC, LCC-32 |
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EDI88130LPS15LI | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CDSO32 |
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EDI88130LPS15LM | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, CERAMIC, LCC-32 |
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EDI88130LPS15NB | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, CERAMIC, SOJ-32 |
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EDI88130LPS15NC | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, CERAMIC, SOJ-32 |
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EDI88130LPS15NI | MICROSEMI |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, CDSO32, CERAMIC, SOJ-32 |
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