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ECP050D-PCB1960 PDF预览

ECP050D-PCB1960

更新时间： 2024-12-01 03:33:19
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WJCI 放大器
页数 文件大小 规格书
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描述
1/2 Watt, High Linearity InGaP HBT Amplifier

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The Communications Edge TM  
ECP050D  
½ Watt, High Linearity InGaP HBT Amplifier  
Product Information  
Product Features  
Product Description  
Functional Diagram  
The ECP050D is a high dynamic range driver amplifier  
in a low-cost surface mount package. The InGaP/GaAs  
HBT is able to achieve high performance for various  
narrowband-tuned application circuits with up to +44  
dBm OIP3 and +28.5 dBm of compressed 1dB power. It  
is housed in an industry standard in a lead-free/  
green/RoHS-compliant 16-pin 4x4mm QFN surface-  
mount package. All devices are 100% RF and DC tested.  
xꢀ 1800 – 2300 MHz  
16 15  
14  
13  
xꢀ +28.5 dBm P1dB  
N/C  
12  
11  
10  
9
1
2
3
4
Vref  
N/C  
RFOUT  
RFOUT  
N/C  
xꢀ +44 dBm Output IP3  
xꢀ 14 dB Gain @ 1960 MHz  
xꢀ +5V Single Positive Supply  
RFIN  
N/C  
5
6
7
8
xꢀ 16-pin 4x4mm lead-free/green/  
RoHS-compliant QFN Package  
Function  
Vref  
RF Input  
RF Output  
Vbias  
Pin No.  
The ECP050D is targeted for use as a driver amplifier in  
wireless infrastructure where high linearity and medium  
power is required. An internal active bias allows the  
ECP050D to maintain high linearity over temperature and  
1
3
Applications  
10, 11  
16  
operate directly off  
a
single +5V supply.  
This  
xꢀ Final stage amplifiers for Repeaters  
xꢀ Mobile Infrastructure  
GND  
Backside Paddle  
2, 4-9, 12-15  
combination makes the device an excellent candidate for  
transceiver line cards in current and next generation  
multi-carrier 3G base stations.  
N/C or GND  
Specifications (1)  
Typical Performance (4)  
Parameters  
Operational Bandwidth  
Test Frequency  
Gain  
Input Return Loss  
Output Return Loss  
Output P1dB  
Output IP3 (2)  
Units Min Typ Max  
Parameters  
Frequency  
Gain  
S11  
S22  
Units  
MHz  
dB  
dB  
dB  
Typical  
MHz  
MHz  
dB  
1800  
2300  
1960  
14.3  
-12  
2140  
14.4  
-23  
2140  
14.4  
23  
12.5  
-8  
-8  
dB  
Output P1dB  
Output IP3 (2)  
dBm  
dBm  
+28.3  
+44  
+28.5  
+42  
dB  
8
dBm  
dBm  
+26.5  
+41  
+28.5  
+42  
IS-95A Channel Power  
dBm  
+22.5  
@ -45 dBc ACPR,  
IS-95A Channel Power  
dBm  
dBm  
+22.5  
+20  
wCDMA Channel Power  
@ -45 dBc ACPR, 1960 MHz  
dBm  
dB  
+20  
5.3  
@ -45 dBc ACLR  
wCDMA Channel Power  
Noise Figure  
Supply Bias  
5
@ -45 dBc ACLR, 2140 MHz  
+5 V @ 250 mA  
Noise Figure  
dB  
mA  
V
5.3  
250  
+5  
Operating Current Range (3)  
Device Voltage  
200  
300  
4. Typical parameters reflect performance in a tuned application circuit at +25 C.  
1. Test conditions unless otherwise noted. 25 ºC, Vsupply = +5 V in tuned application circuit.  
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The  
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is  
expected that the current can increase up to 300mA at P1dB.  
Absolute Maximum Rating  
Parameter  
Rating  
-40 to +85 qC  
-65 to +150 qC  
+22 dBm  
+8 V  
Operating Case Temperature  
Storage Temperature  
RF Input Power (continuous)  
Device Voltage  
Ordering Information  
Part No.  
ECP050D-G  
Description  
½ Watt, High Linearity InGaP HBT Amplifier  
Device Current  
400 mA  
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)  
Device Power  
Junction Temperature  
2 W  
+250 qC  
ECP050D-PCB1960  
ECP050D-PCB2140  
1960 MHz Evaluation Board  
2140 MHz Evaluation Board  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
Web site: www.wj.com Page 1 of 5 April 2006  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com  
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