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ECP052D_06

更新时间： 2024-12-01 03:33:19
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 Watt, High Linearity InGaP HBT Amplifier

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ECP052D  
½ Watt, High Linearity InGaP HBT Amplifier  
Product Features  
Product Description  
Functional Diagram  
The ECP052D is a high dynamic range driver amplifier  
in a low-cost surface mount package. The InGaP/GaAs  
HBT is able to achieve high performance for various  
narrowband-tuned application circuits with up to +44  
dBm OIP3 and +28.5 dBm of compressed 1dB power.  
It is housed in an industry standard in a lead-free/  
green/RoHS-compliant 16-pin 4x4mm QFN surface-  
mount package. All devices are 100% RF and DC  
tested.  
• 800 – 1000 MHz  
16  
15  
14  
13  
N/C  
12  
11  
10  
9
1
2
3
4
• +28.5 dBm P1dB  
Vref  
N/C  
RF OUT  
RF OUT  
N/C  
• +44 dBm Output IP3  
• 18 dB Gain @ 900 MHz  
• Single Positive Supply (+5V)  
RF IN  
N/C  
5
6
7
8
• 16-pin 4x4mm Pb-free/green/  
RoHS-compliant QFN package  
Function  
Vref  
Pin No.  
The ECP052D is targeted for use as a driver amplifier in  
wireless infrastructure where high linearity and medium  
power is required. An internal active bias allows the  
ECP052D to maintain high linearity over temperature  
and operate directly off a single +5V supply. This  
combination makes the device an excellent candidate for  
transceiver line cards in current and next generation  
multi-carrier 3G base stations.  
1
3
RF Input  
RF Output  
Vbias  
Applications  
10, 11  
16  
• Final stage amplifiers for  
Repeaters  
GND  
Backside Paddle  
2, 4-9, 12-15  
N/C or GND  
• Mobile Infrastructure  
Specifications  
Parameter  
Operational Bandwidth  
Test Frequency  
Gain  
Units Min Typ Max  
MHz  
MHz  
dB  
800  
1000  
850  
17  
Output P1dB  
Output IP3 (2)  
Test Frequency  
Gain  
dBm  
dBm  
MHz  
dB  
+28  
+44  
900  
17.8  
18  
15.5  
Input Return Loss  
Output Return Loss  
Output P1dB  
Output IP3 (2)  
dB  
dB  
7
dBm  
dBm  
+27  
+28.7  
+43  
+42.5  
IS-95A Channel Power  
@ -45 dBc ACPR, 1960 MHz  
dBm  
+23  
Noise Figure  
dB  
mA  
V
7
Quiescent Current, Icq  
Device Voltage, Vcc  
200  
250  
+5  
300  
1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit.  
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a  
reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100Ω. (ie. total device current typically will be 262 mA.)  
Absolute Maximum Rating  
Parameter  
Rating  
-40 to +85 °C  
-65 to +150 °C  
+22 dBm  
+8 V  
Operating Case Temperature  
Storage Temperature  
RF Input Power (continuous)  
Device Voltage  
Ordering Information  
Part No.  
Description  
½-Watt, High Linearity InGaP HBT Amplifier  
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)  
Device Current  
Device Power  
Junction Temperature  
400 mA  
2 W  
ECP052D-G  
ECP052D-PCB900  
900 MHz Evaluation Board  
+250 °C  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
Page 1 of 4 December 2006  
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com  
1234

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