Datasheet > ECP100

ECP100

更新时间： 2024-11-30 23:49:59

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
17页	234K
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中文翻译

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数据手册

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ECP100 数据手册

PRELIMINARY DATA SHEET

Applications

ECP100

1.0 WATT POWER AMPLIFIER

Product Features

ꢀ 100 - 2300MHz

ꢀ Basestations and Repeaters

ꢀ 31 dBm P1dB

ꢀ CDMA/GSM/TDMA/EDGE

ꢀ PCS/CDMA2000/IMT2000/UMTS

ꢀ Multi-carrier systems

ꢀ High Linearity: 47 dBm OIP3

ꢀ High Efficiency: PAE > 45%

ꢀ 12 dB Linear Gain at 1.96GHz

ꢀ Single 5V Supply

Packages Available

ꢀ QFN-16 (4x4mm)

ꢀ SOIC-8

ꢀ High Reliabilty

ꢀ Class A or AB operation

Product Description

The ECP100 is a single stage, 1.0W power amplifier that offers excellent linearity and efficiency. This device was

developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a

partially matched input impedance. It is optimized for multicarrier applications and allows customers to use class A

or class AB operations. The devices can be easily matched in output side to obtain the optimum power, linearity and

efficiency. The product is targeted for use as a driver amplifier for wireless infrastructure applications. It is available in

two surface-mount plastic packages: QFN-16 (4x4mm) and SOIC-8.

Electrical Specifications

Test Conditions: Ta = 25^oC, V_CC= +5 V Vref = + 5V Icq = 450 mA (class A operation)

LIMITS

SYMBOL

PARAMETER

Frequency

UNIT

TEST CONDITION

MIN.

TYP.

MAX.

100

2300

MHz

f = 900MHz

f = 1960MHz

f = 2140MHz

f = 900MHz

f = 1960MHz

f = 2140MHz

f = 900MHz

f = 1960MHz

f = 2140MHz

f = 1960MHz

16.0

11.0

10.0

30.0

29.5

45.0

17.0

12.0

11.5

30.5

31.0

47.0

46.0

-45

Gain (Small Signal)

Output Power @ 1dB

Compression

P1dB

OIP3

dBm

Output Third Order Intercept

Note 1

ACPR1

Pout = 25.5dBm (IS-95)

Pout = 23dBm (WCDMA)

dBc

(9 ch. Fwd.)

Note 2

f = 2140MHz

-45

±0.5

15.0

540

5.0

Gain Flatness (120MHz Band) f = 2140MHz

Input Return Loss (50 Ohm)

Operational Current @ P1dB

Device Voltage

f = 2140MHz

Icop

Vde

Vdc

°C/W

Thermal Resistance

Note 3

Note 1: OIP3 = Pout (bypower meter, total 2-tone power) + (IM3(dB))/2) - 3dB

Note 2: ACPR measured for 3GPP test model 1, 64 DPCH. Channel bandwidth = 3.84MHz. Frequencyoffset: +/- 5MHz.

Note 3: jc is measured between the device junction and the exposed die attach pad.

Note 4: For the recommended mounting solution please refer to APNOTE AP-000556-000.

CAUTION!

SENSITIVE ELECTRONIC DEVICE

Revision H

SS-000535-000

EiC Corp. A Subsidiary of EiC Enterprises, Ltd.

45738 Northport Loop West, Fremont, CA 94538 ꢀPhone: (510) 979-8999 ꢀ Fax: (510) 979-8902

www.eiccorp.com

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与ECP100相关器件

型号	品牌	获取价格	描述	数据表
ECP100D	WJCI	获取价格	1 Watt, High Linearity InGaP HBT Amplifier
ECP100D-G	WJCI	获取价格	1 Watt, High Linearity InGaP HBT Amplifier
ECP100D-PCB1960	WJCI	获取价格	1 Watt, High Linearity InGaP HBT Amplifier
ECP100D-PCB2140	WJCI	获取价格	1 Watt, High Linearity InGaP HBT Amplifier
ECP100D-PCB900	WJCI	获取价格	1 Watt, High Linearity InGaP HBT Amplifier
ECP100G	WJCI	获取价格	1 Watt, High Gain HBT Amplifier
ECP101	ETC	获取价格	TOOL HAND CRIMPER 10-22AWG SIDE
ECP103	WJCI	获取价格	1 Watt, High Linearity InGaP HBT Amplifier
ECP103D	WJCI	获取价格	1 Watt, High Linearity InGaP HBT Amplifier
ECP103D-PCB2450	WJCI	获取价格	1 Watt, High Linearity InGaP HBT Amplifier

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