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ECP103G

更新时间： 2024-12-01 06:55:43
品牌 Logo 应用领域
WJCI 放大器射频微波
页数 文件大小 规格书
5页 382K
描述
1 Watt, High Linearity InGaP HBT Amplifier

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中文翻译

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ECP103G 技术参数

是否Rohs认证： 不符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.74
Is Samacsys：N特性阻抗：50 Ω
构造：COMPONENT增益：9 dB
最大输入功率 (CW)：26 dBmJESD-609代码：e0
最大工作频率：2700 MHz最小工作频率：2300 MHz
最高工作温度：85 °C最低工作温度：-40 °C
射频/微波设备类型：NARROW BAND MEDIUM POWER端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

ECP103G 数据手册

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The Communications Edge
TM  
ECP103  
1 Watt, High Linearity InGaP HBT Amplifier  
Product Information  
Product Features  
Product Description  
Functional Diagram  
The ECP103 is a high dynamic range driver amplifier in  
a low-cost surface mount package. The InGaP/GaAs  
HBT is able to achieve superior performance for various  
narrowband-tuned application circuits with up to +46  
dBm OIP3 and +30.5 dBm of compressed 1-dB power.  
The part is housed in an industry standard SOIC-8 SMT  
package. All devices are 100% RF and DC tested.  
xꢀ 2300 - 2700 MHz  
16 15  
14 13  
N/C  
12  
11  
10  
9
1
2
3
4
xꢀ +30.5 dBm P1dB  
Vref  
N/C  
RFOUT  
RFOUT  
N/C  
xꢀ +46 dBm Output IP3  
xꢀ 10 dB Gain @ 2450 MHz  
xꢀ 9 dB Gain @ 2600 MHz  
xꢀ Single Positive Supply (+5V)  
RFIN  
N/C  
5
6
7
8
The ECP103 is targeted for use as a driver amplifier in  
wireless infrastructure where high linearity and medium  
power is required. An internal active bias allows the  
ECP103 to maintain high linearity over temperature and  
ECP103D  
xꢀ Available in SOIC-8 or 16pin  
4mm QFN package  
1
2
3
4
Vref  
N/C  
Vbias  
8
7
6
5
operate directly off  
a
single +5V supply.  
This  
RF OUT  
RF OUT  
N/C  
combination makes the device an excellent candidate for  
driver amplifier stages in wireless-LAN, digital  
multimedia broadcast, or fixed wireless applications. The  
device can also be used in next generation RFID readers.  
Applications  
RF IN  
N/C  
xꢀ W-LAN  
xꢀ RFID  
xꢀ DMB  
xꢀ Fixed Wireless  
ECP103G  
Specifications (1)  
Typical Performance (4)  
Parameter  
Operational Bandwidth  
Test Frequency  
Gain  
Units Min Typ Max  
Parameter  
Frequency  
S21 – Gain  
S11  
Units  
MHz  
dB  
Typical  
MHz  
MHz  
dB  
2300  
2700  
2450  
10  
15  
2600  
9
15  
2450  
10  
dB  
S22  
Output P1dB  
Output IP3  
dB  
dBm  
dBm  
8
30.5  
46  
8
30.0  
45  
Input Return Loss  
Output Return Loss  
Output P1dB  
dB  
dB  
18  
8
dBm  
dBm  
dB  
MHz  
dB  
dBm  
dBm  
mA  
V
+30.5  
+46  
6.3  
2600  
9
+30  
+45  
450  
5
Output IP3 (2)  
W-CDMAChannelPower  
dBm  
dB  
22.5  
7
@ -45 dBc ACPR  
Noise Figure  
Test Frequency  
Gain  
Noise Figure  
7
7
Supply Bias (3)  
+5 V @ 450 mA  
4. Typical parameters reflect performance in a tuned application circuit at +25 C.  
Output P1dB  
Output IP3 (2)  
Operating Current Range , Icc (3)  
Device Voltage, Vcc  
400  
500  
1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V in a tuned application circuit.  
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The  
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
3. This corresponds to the quiescent current or operating current under small-signal conditions into  
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1  
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull  
10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current  
typically will be 461 mA.)  
Absolute Maximum Rating  
Ordering Information  
Parameters  
Rating  
-40 to +85 qC  
-65 to +150 qC  
+26 dBm  
+8 V  
Part No.  
ECP103D  
ECP103G  
Description  
1 Watt InGaP HBT Amplifier (16p 4mm Pkg)  
1 Watt InGaP HBT Amplifier (Soic-8 Pkg)  
Operating Case Temperature  
Storage Temperature  
RF Input Power (continuous)  
Device Voltage  
ECP103D-PCB2450 2450 MHz Evaluation Board  
ECP103D-PCB2650 2600 MHz Evaluation Board  
ECP103G-PCB2450 2450 MHz Evaluation Board  
ECP103G-PCB2650 2600 MHz Evaluation Board  
Device Current  
Device Power  
900 mA  
5 W  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
Web site: www.wj.com October 2004 Rev 1  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com  
12345

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