The Communications Edge
TM ECP103
1 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Features
Product Description
Functional Diagram
The ECP103 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve superior performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +30.5 dBm of compressed 1-dB power.
The part is housed in an industry standard SOIC-8 SMT
package. All devices are 100% RF and DC tested.
xꢀ 2300 - 2700 MHz
16 15
14 13
N/C
12
11
10
9
1
2
3
4
xꢀ +30.5 dBm P1dB
Vref
N/C
RFOUT
RFOUT
N/C
xꢀ +46 dBm Output IP3
xꢀ 10 dB Gain @ 2450 MHz
xꢀ 9 dB Gain @ 2600 MHz
xꢀ Single Positive Supply (+5V)
RFIN
N/C
5
6
7
8
The ECP103 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP103 to maintain high linearity over temperature and
ECP103D
xꢀ Available in SOIC-8 or 16pin
4mm QFN package
1
2
3
4
Vref
N/C
Vbias
8
7
6
5
operate directly off
a
single +5V supply.
This
RF OUT
RF OUT
N/C
combination makes the device an excellent candidate for
driver amplifier stages in wireless-LAN, digital
multimedia broadcast, or fixed wireless applications. The
device can also be used in next generation RFID readers.
Applications
RF IN
N/C
xꢀ W-LAN
xꢀ RFID
xꢀ DMB
xꢀ Fixed Wireless
ECP103G
Specifications (1)
Typical Performance (4)
Parameter
Operational Bandwidth
Test Frequency
Gain
Units Min Typ Max
Parameter
Frequency
S21 – Gain
S11
Units
MHz
dB
Typical
MHz
MHz
dB
2300
2700
2450
10
15
2600
9
15
2450
10
dB
S22
Output P1dB
Output IP3
dB
dBm
dBm
8
30.5
46
8
30.0
45
Input Return Loss
Output Return Loss
Output P1dB
dB
dB
18
8
dBm
dBm
dB
MHz
dB
dBm
dBm
mA
V
+30.5
+46
6.3
2600
9
+30
+45
450
5
Output IP3 (2)
W-CDMAChannelPower
dBm
dB
22.5
7
@ -45 dBc ACPR
Noise Figure
Test Frequency
Gain
Noise Figure
7
7
Supply Bias (3)
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
Output P1dB
Output IP3 (2)
Operating Current Range , Icc (3)
Device Voltage, Vcc
400
500
1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V in a tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Ordering Information
Parameters
Rating
-40 to +85 qC
-65 to +150 qC
+26 dBm
+8 V
Part No.
ECP103D
ECP103G
Description
1 Watt InGaP HBT Amplifier (16p 4mm Pkg)
1 Watt InGaP HBT Amplifier (Soic-8 Pkg)
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
ECP103D-PCB2450 2450 MHz Evaluation Board
ECP103D-PCB2650 2600 MHz Evaluation Board
ECP103G-PCB2450 2450 MHz Evaluation Board
ECP103G-PCB2650 2600 MHz Evaluation Board
Device Current
Device Power
900 mA
5 W
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
Web site: www.wj.com October 2004 Rev 1
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com
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