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ECP053D-PCB2450 PDF预览

ECP053D-PCB2450

更新时间: 2022-12-18 00:22:55
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WJCI 放大器
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3页 147K
描述
1/2 Watt, High Linearity InGaP HBT Amplifier

ECP053D-PCB2450 数据手册

 浏览型号ECP053D-PCB2450的Datasheet PDF文件第2页浏览型号ECP053D-PCB2450的Datasheet PDF文件第3页 
The Communications Edge TM  
ECP053  
½ Watt, High Linearity InGaP HBT Amplifier  
Product Information  
Product Features  
Product Description  
Functional Diagram  
The ECP053 is a high dynamic range driver amplifier in  
a low-cost surface mount package. The InGaP/GaAs  
HBT is able to achieve high performance for various  
narrowband-tuned application circuits with up to +43  
dBm OIP3 and +28 dBm of compressed 1dB power. It is  
housed in an industry standard SOIC-8 or 16-pin 4x4mm  
QFN SMT package. All devices are 100% RF and DC  
tested.  
2300 – 2700 MHz  
16  
15  
14  
13  
N/C  
12  
11  
10  
9
1
2
3
4
Vref  
N/C  
+28 dBm P1dB  
RF OUT  
RF OUT  
N/C  
+43 dBm Output IP3  
13 dB Gain @ 2450 MHz  
Single Positive Supply (+5V)  
RF IN  
N/C  
5
6
7
8
Available in SOIC-8 or 16pin  
4mm QFN package  
ECP053D  
The ECP053 is targeted for use as a driver amplifier in  
wireless infrastructure where high linearity and medium  
power is required. An internal active bias allows the  
ECP053 to maintain high linearity over temperature and  
1
2
3
4
Vref  
N/C  
Vbias  
8
7
6
5
Applications  
RF OUT  
RF OUT  
N/C  
operate directly off  
a
single +5V supply.  
This  
W-LAN  
RFID  
DMB  
combination makes the device an excellent candidate for  
driver amplifier stages in wireless-LAN, digital  
multimedia broadcast, or fixed wireless applications. The  
device can also be used in next generation RFID readers.  
RF IN  
N/C  
Fixed Wireless  
ECP053G  
Specifications (1)  
Parameter  
Operational Bandwidth  
Test Frequency  
Gain  
Units Min Typ Max  
MHz  
MHz  
dB  
2300  
2700  
2450  
13  
Input Return Loss  
Output Return Loss  
Output P1dB  
dB  
dB  
dBm  
dBm  
dB  
20  
8
+27  
+42  
5.3  
2600  
12  
Output IP3 (2)  
Noise Figure  
Test Frequency  
Gain  
MHz  
dB  
Input Return Loss  
Output Return Loss  
Output P1dB  
dB  
dB  
dBm  
dBm  
mA  
V
23  
8
+27  
+42  
250  
+5  
Output IP3 (2)  
Operating Current Range, Icc (3)  
Device Voltage, Vcc  
200  
300  
Test conditions unless otherwise noted.  
1. T = 25ºC, Vsupply = +5 V, Frequency = 2650 MHz, in tuned application circuit.  
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a  
reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100. (ie. total device current typically will be 262 mA.)  
Absolute Maximum Rating  
Ordering Information  
Parameters  
Rating  
-40 to +85 °C  
-65 to +150 °C  
+28 dBm  
+8 V  
Part No.  
ECP053D  
ECP053G  
Description  
Operating Case Temperature  
Storage Temperature  
RF Input Power (continuous)  
Device Voltage  
½ Watt InGaP HBT Amplifier (16p 4mm Pkg)  
½ Watt InGaP HBT Amplifier (Soic-8 Pkg)  
ECP053D-PCB2450 2450 MHz Evaluation Board  
ECP053D-PCB2600 2600 MHz Evaluation Board  
ECP053G-PCB2450 2450 MHz Evaluation Board  
ECP053G-PCB2600 2600 MHz Evaluation Board  
Device Current  
Device Power  
400 mA  
2 W  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
August 2004  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  

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