Datasheet > EC731N60E

EC731N60E

更新时间： 2024-01-09 03:27:57

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
4页	196K
描述
600V N-Channel Power MOSFET

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数据手册

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EC731N60E 数据手册

EC731N60E

600V N-Channel Power MOSFET

Features

ꢀ 600V, 0.8A, RDS(ON)(Max.) = 11ꢁ@VGS = 10V.

ꢀ Low Intrinsic Capacitance.

ꢀ Rugged and reliable.

Applications

ꢀ Charger

ꢀ Standby Power.

ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted

Symbol

Parameter

Value

Unit

600

DSS

Drain-Source Voltage

Gate-Source Voltage

±30

0.8

Continuous Drain Current, T

=25°C

0.48

=100°C

3.2

Drain Current-Pulsed

2.98

7.8

°C

Power Dissipation @ T =25°C

Single Pulsed Avalanche Energy

Operating and Store Temperature Rang

-55~150

T ,TSTG

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-Case Max.

Value

Unit

Rθ JC

°C/W

Electrical Characteristics( T_J= 25°C unless otherwise noted)

▊ Off Characteristics

Symbol

BVDSS

Characteristics

Test Condition

GS=0V, I =250ꢀA

Max. Unit

Min. Typ.

600

Drain-Source

Breakdown Voltage

Drain-source

DSS

VDS=600V, VGS=0V

Leakage Current

Forward Gate-body

Leakage Current

100

GSSF

VDS=0V,VGS=+30V

Reverse Gate-body

Leakage Current

GSSR

VDS=0V,VGS=-30V

E-CMOS Corp. (www.ecmos.com.tw)

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