Datasheet > EC731020J7

EC731020J7

更新时间： 2024-02-02 16:38:20

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
6页	369K
描述
100V , 60A N-Channel

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EC731020J7 数据手册

EC731020J7

100V 、60A N-Channel

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive

avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power

switching application and a wide variety of other applications.

Features and Benefits:

ꢀ Advanced MOSFET process technology

ꢀ Special designed for PWM, load switching and

general purpose applications

ꢀ Ultra low on-resistance with low gate charge

ꢀ Fast switching and reverse body recovery

ꢀ 175ꢀ operating temperature

Main Product Characteristics

100V

16mꢀ (typ.)

60A

DSS

DS(on)

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

@ TC = 25°C

@ TC = 100°C

Continuous Drain Current, V GS @ 10V

ꢁ

Continuous Drain Current, V GS @ 10V

Pulsed Drain Current

ꢂ

240

@TC = 25°C

Power Dissipation

ꢃ

143

W/°C

Linear Derating Factor

Drain-Source Voltage

Gate-to-Source Voltage

2.0

VDS

VGS

EAS

100

± 20

240

Single Pulse Avalanche Energy @ L=0.3mH

Avalanche Current @ L=0.3mH

IAS

STG

Operating Junction and Storage Temperature Range

-55 to + 175

°C

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 6

5A13N-Rev.F001

12 3 4 5 6

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