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EBJ41HE4BDFM-AE-F PDF预览

EBJ41HE4BDFM-AE-F

更新时间: 2024-11-25 12:20:55
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器双倍数据速率
页数 文件大小 规格书
19页 208K
描述
4GB Registered DDR3 SDRAM DIMM

EBJ41HE4BDFM-AE-F 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM240,40
针数:240Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.84访问模式:DUAL BANK PAGE BURST
最长访问时间:0.3 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):533 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N240JESD-609代码:e4
长度:133.35 mm内存密度:77309411328 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:72
功能数量:1端口数量:1
端子数量:240字数:1073741824 words
字数代码:1000000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:1GX72输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM240,40封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.5 V认证状态:Not Qualified
刷新周期:8192座面最大高度:8.5 mm
自我刷新:YES最大待机电流:1.24 A
子类别:Other Memory ICs最大压摆率:4.66 mA
最大供电电压 (Vsup):1.575 V最小供电电压 (Vsup):1.425 V
标称供电电压 (Vsup):1.5 V表面贴装:NO
技术:CMOS温度等级:OTHER
端子形式:NO LEAD端子节距:1 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

EBJ41HE4BDFM-AE-F 数据手册

 浏览型号EBJ41HE4BDFM-AE-F的Datasheet PDF文件第2页浏览型号EBJ41HE4BDFM-AE-F的Datasheet PDF文件第3页浏览型号EBJ41HE4BDFM-AE-F的Datasheet PDF文件第4页浏览型号EBJ41HE4BDFM-AE-F的Datasheet PDF文件第5页浏览型号EBJ41HE4BDFM-AE-F的Datasheet PDF文件第6页浏览型号EBJ41HE4BDFM-AE-F的Datasheet PDF文件第7页 
DATA SHEET  
4GB Registered DDR3 SDRAM DIMM  
EBJ41HE4BDFD  
EBJ41HE4BDFM  
EBJ41HE4BDFP  
(512M words × 72 bits, 2 Ranks)  
Specifications  
Features  
Density: 4GB  
Organization  
Double-data-rate architecture; two data transfers per  
clock cycle  
The high-speed data transfer is realized by the 8 bits  
512M words × 72 bits, 2 ranks  
prefetch pipelined architecture  
Mounting 36 pieces of 1G bits DDR3 SDRAM sealed  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
in FBGA  
Package: 240-pin socket type dual in line memory  
module (DIMM)  
DQS is edge-aligned with data for READs; center-  
PCB height: 30.5mm (max.)  
Lead pitch: 1.0mm  
Lead-free (RoHS compliant) and Halogen-free  
Power supply: VDD = 1.5V ± 0.075V  
Data rate: 1333Mbps/1066Mbps (max.)  
aligned with data for WRITEs  
Differential clock inputs (CK and /CK)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Commands entered on each positive CK edge; data  
and data mask referenced to both edges of DQS  
Eight internal banks for concurrent operation  
(components)  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Interface: SSTL_15  
On-Die-Termination (ODT) for better signal quality  
Synchronous ODT  
Burst lengths (BL): 8 and 4 with Burst Chop (BC)  
/CAS Latency (CL): 6, 7, 8, 9  
Dynamic ODT  
/CAS write latency (CWL): 5, 6, 7  
Asynchronous ODT  
Precharge: auto precharge option for each burst  
access  
Multi Purpose Register (MPR) for temperature read  
out  
Refresh: auto-refresh, self-refresh  
Refresh cycles  
ZQ calibration for DQ drive and ODT  
Programmable Partial Array Self-Refresh (PASR)  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
/RESET pin for Power-up sequence and reset  
function  
Operating case temperature range  
TC = 0°C to +95°C  
SRT range:  
Normal/extended  
Programmable Output driver impedance control  
1 piece of registering clock driver and 1 piece of  
serial EEPROM (256 bytes EEPROM) for Presence  
Detect (PD)  
Class B temperature sensor functionality with  
EEPROM  
Note: Warranty void if removed DIMM heat  
spreader.  
Document No. E1580E30 (Ver. 3.0)  
Date Published January 2010 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2009-2010  

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