EA30QS06

更新时间： 2024-09-18 23:13:19

品牌	Logo	应用领域
NIEC		整流二极管肖特基二极管瞄准线
页数	文件大小	规格书
6页	50K
描述
Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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EA30QS06 数据手册

SBD Type : EA30QS06

OUTLINE DRAWING

FEATURES

* TO-251AA Case

* Low Forward Voltage drop

* Low Power Loss

* High Surge Capability

* 40 Volts thru 100 Volts Types Available

Maximum Ratings

Approx Net Weight:0.35g

EA30QS06

Symbol

Unit

Rating

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Voltage

V_RRM

V_RSM

P.C.Board

mounted *

Average Rectified

Output Current

1.3

Ta=36°C

50Hz Half Sine Wave

Resistive Load

I_O

3.0 Tc=123°C

RMS Forward Current

Surge Forward Current

I_F(RMS)

I_FSM

4.71

50Hz Half Sine Wave,1cycle,

Non-repetitive

Operating JunctionTemperature Range

Storage Temperature Range

Tjw

Tstg

- 40 to + 150

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Symbol

I_RM

V_FMTj=25°C,I_FM= 3 A

Rth(j-a) P.C.Board mounted *

Rth(j-c)

Conditions

Tj=25°C,V_RM=V_RRM

Min Typ Max Unit

3.0

0.58

Thermal

Resistance

Junction to Ambient

Junction to Case

80 °C/W

°C/W

* Print Land = 20x20 mm

12 3 4 5 6

中文翻译

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与EA30QS06相关器件

型号	品牌	获取价格	描述	数据表
EA30QS06-F	NIEC	获取价格	Surface Mounting, Schottky Barrier Diode
EA30QS06-F	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
EA30QS06-FTE16F2	NIEC	获取价格	Rectifier Diode,
EA30QS06-FTE16F3	NIEC	获取价格	Rectifier Diode,
EA30QS09	NIEC	获取价格	Schottky Barrier Diode
EA30QS09-F	NIEC	获取价格	Schottky Barrier Diode
EA30QS10	NIEC	获取价格	Schottky Barrier Diode
EA30QS10-F	NIEC	获取价格	Schottky Barrier Diode
EA30QS10-F	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
EA31	GILWAY	获取价格	Photointerrupters