Datasheet > E5V5LUD5D

E5V5LUD5D

更新时间： 2024-11-10 14:48:15

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	283K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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E5V5LUD5D 数据手册

E5V5LUD5D

ESD Protection Diode

Features

• Low channel input capacitance

• Four channels of ESD protection

1. I/O 2. GND(V_N) 3. I/O

4. I/O 5. VP 6. I/O

Marking Code : 5G

Applications

• General Purpose High−Speed Data Line ESD Protection

• PCI Express Ports

SOT-26 Plastic package

• Serial ATA Ports in Desktop PCs and Hard Disk Drives

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

I_PP

Value

Unit

Peak Pulse Current (tp = 8/20 µs)

ESD per IEC 61000-4-2

Air

Contact

± 10

± 8

V_ESD

Operating Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Typ.

Symbol

V_RWM

Min.

Max.

5.5

Unit

Reverse Stand-Off Voltage at VP to GND

Reverse Breakdown Voltage

at I_R= 1 mA , VP to GND

V_(BR)R

I_R

8.6

Reverse Breakdown Voltage

at I_R= 1 mA , IO to GND

Reverse Current

at V_R= 3.3 V , IO to GND

at V_R= 5.5 V , VP to GND

Forward Voltage

at I_F= 8 mA

5.5

µA

V_F

0.9

Clamping Voltage

at I_PP= 1 A , tp = 8/20 µs , IEC 61000-4-5 , VP to GND

at I_PP= 1 A , tp = 8/20 µs , IEC 61000-4-5 , GND to VP

9.9

1.6

V_C

C_j

Ω

Junction Capacitance

at V_R= 0 V, f = 1 MHz , IO to GND

Dynamic Resistance ¹⁾

at I_PP= 1 A , VP to GND

at I_PP= 1 A , GND to VP

0.96

0.5

R_DYN

¹⁾tp =100 ns,tn = 0.2 ns , t_MEAS= 70-90 ns

1 / 3

Dated: 21/01/2021 Rev:01

12 3

中文翻译

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