Datasheet > E5V5UUPD1C

E5V5UUPD1C

更新时间： 2024-11-25 14:55:19

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	202K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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E5V5UUPD1C 数据手册

E5V5UUPD1C

ESD Protection Dioe

PINNING

DESCRIPTION

Cathode

Features

Anode

• Low clamping voltage

• Low operating voltage

Transparent top view

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

Symbol

Value

Unit

P_PK

I_PP

4.5

Air

Contact

± 20

ESD (IEC61000-4-2)

V_ESD

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃ unless otherwise specified

Parameter

Symbol

V_RWM

Min.

Typ

Max.

5.5

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

11.5

100

Reverse Current

at V_RWM= 5.5 V

I_R

Clamping Voltage

V_C

at I_PP= 4.5 A, tp = 8/20 µs

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

2.8

7.5

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

0.7

R_dyn

0.4

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated : 15/08/2023 Rev : 02

12 3

中文翻译

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