Datasheet > E5V5UUPN4V

E5V5UUPN4V

更新时间： 2023-12-06 20:08:10

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	201K
描述
静电保护二极管

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数据手册

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E5V5UUPN4V 数据手册

E5V5UUPN4V

ESD Protection Diode

I/O1

GND

I/O2

Features

• 4 Channels of ESD protection

• Low clamping voltage

• Low operating voltage

1. I/O1 2. I/O2 3. GND

4. GND 5. I/O3 6. I/O4

Marking Code : B5

I/O4

I/O3

GND

DFN1610-6H Plastic package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

IEC61000-4-2 (ESD)

I_PP

4.5

Air

± 18

V_ESD

Contact

Operation Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Typ

Symbol

V_RWM

Min.

Max.

5.5

Unit

Reverse Stand-Off Voltage, Any I/O to Gnd

Reverse Breakdown Voltage

at I_R= 1 mA, Any I/O to Gnd

V_(BR)R

11.5

0.1

Reverse Current

I_R

V_C

C_j

μA

at V_RWM= 5.5 V, Any I/O to Gnd

Clamping Voltage

at I_PP= 4.5 A , tp = 8/20 µs, Any I/O to Gnd

Junction Capacitance

0.8

at V_R= 0 V, f = 1 MHz , Any I/O to Gnd

1 / 3

Dated: 30/10/2020 Rev : 01

12 3

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