E5V5LUKA2D
ESD Protection Diode
3
Features
• Low capacitance
2
1
1. I/O 2. I/O 3.GND
SOT-23 Plastic Package
Absolute Maximum Ratings (at Ta = 25℃)
Parameter
Symbol
PPK
Value
192
12
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
IPP
A
Air
Contact
± 15
± 8
IEC61000-4-2 (ESD)
VESD
KV
Operating Junction Temperature Range
Storage Temperature Range
Tj
- 55 to + 125
- 55 to + 150
℃
℃
Tstg
Characteristics at Ta = 25℃
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
5.5
Unit
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
at IR = 1 mA, I/O to GND
V(BR)R
IR
7
-
-
-
-
12
1
V
µA
V
Reverse Current
at VRWM = 5.5 V, I/O to GND
Forward voltage
at IF = 15 mA, GND to Any I/O
VF
-
1.1
Clamping Voltage
at IPP = 5 A , tp = 8/20 µs, I/O to GND
at IPP = 12 A , tp = 8/20 µs, I/O to GND
VC
-
-
-
-
12
16
V
V
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns, I/O to GND
at ITLP =16 A, tp = 0.2/100 ns, I/O to GND
VCL
-
-
9.6
14.5
-
-
Junction Capacitance
at VR = 2.5 V , f = 1 MHz, I/O to GND
Dynamic Resistance 1)
Cj
-
-
1.2
1.7
-
pF
Rdyn
0.41
Ω
1) Dynamic Resistance calculated from ITLP = 4 A to ITLP = 16 A.
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Dated: 27/05/2022 Rev: 01