E5V5UPI2C
ESD Protection Diode
2
1
2
3
1
Bottom view
DFN1006-3BV Plastic Package
3
Applications
1. Cathode 2. Cathode 3. Anode
Bottom View
• High-Speed Ports
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
Symbol
Value
40
Unit
W
PPK
IPP
4
A
Air
Contact
± 25
± 22
ESD per IEC 61000-4-2
VESD
KV
Operation Junction Temperature
Storage Temperature Range
Tj
125
℃
℃
Tstg
- 55 to + 150
Characteristics at Ta = 25℃ unless otherwise specified
Parameter
Symbol
VRWM
Min.
Max.
Unit
Reverse Stand-Off Voltage
at IR = 1 mA, Pin 1 or Pin 2 to Pin 3
-
5.5
11
V
V
Reverse Breakdown Voltage
at IR = 1 mA, Pin 1 or Pin 2 to Pin 3
V(BR)R
6
Reverse Current
at VR = 5.5 V
IR
-
100
nA
Pin 1 or Pin 2 to Pin 3 and Between Pin 1 and Pin 2
Clamping Voltage
at IPP = 4 A, tp = 8/20 µs, Pin 1 or Pin 2 to Pin 3
VC
Cj
-
-
10
V
Junction Capacitance
at VR = 0 V, f = 1 MHz, Pin 1 to Pin 2
0.6
pF
1 / 3
®
Dated: 02/03/2023 Rev:02