Datasheet > E12SUKB2C

E12SUKB2C

更新时间： 2023-12-06 20:11:38

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
4页	345K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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E12SUKB2C 数据手册

E12SUKB2C

ESD Protection Diode

Features

• Low leakage current

• Low capacitance

SOT-323 Plastic Package

1. Cathode 2. Cathode 3. Anode

Applications

• Cellular Handsets & Accessories

• Personal Digital Assistants (PDAs)

• Notebooks & Handhelds

• Portable Instrumentation

• Digital Cameras

Absolute Maximum Ratings (at T_a= 25℃ between Pin 1 - 3 or 2 - 3 unless otherwise specified)

Parameter

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

Symbol

P_PK

Value

150

Unit

I_PP

Air

Contact

ESD Discharge (IEC61000-4-2)

V_ESD

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics (at T_a= 25℃ between Pin 1 - 3 or 2 - 3 unless otherwise specified)

Parameter

Reverse Working Voltage

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

I_R

13.3

Reverse Current

at V_R= 12 V

0.1

µA

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs

at I_PP= 5 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

20.4

24.6

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.35

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16A .

1 / 4

Dated: 16/09/2021 Rev: 01

12 3 4

中文翻译

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