Datasheet > E13002TO-92

E13002TO-92

更新时间： 2022-10-28 23:21:34

品牌	Logo	应用领域
DAESAN		晶体晶体管
页数	文件大小	规格书
2页	5453K
描述
POWER TRANSISTOR

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E13002TO-92 数据手册

POWER TRANSISTOR E13002

SWITCHING REGULATOR APPLICATION

TO-92

• High speed switching

• Suitable for switching regulator

and motor control

INCHES

MIN MAX

MILLIMETERS

DIM

MIN

4.44

7.37

3.18

0.46

0.41

1.15

2.42

0.46

12.70

6.35

2.04

---

MAX

5.21

7.87

4.19

0.56

0.48

1.39

2.66

0.61

---

• Case : TO-92 molded plastic body

0.175 0.205

0.290 0.310

0.125 0.165

0.018 0.022

0.016 0.019

0.045 0.055

0.095 0.105

0.018 0.024

SEATING

PLANE

0.500

0.250

---

0.080 0.105

2.66

2.54

---

0.135

0.100

---

3.43

---

NPN SILICON TRANSISTOR

FEATURES Tc=25^oC unless otherwise specified

Parameter

Symbol

Value

UNIT

Power dissipation

PCM

ICM

1.0

Collector current

Operating and storage junction temperature range

TJ, TSTG

-55 ^oC to +150 ^oC

^oC

ELECTRICAL CHARACTERISTICS Tc=25^oC unless otherwise specified

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IC=100

IC=1mA , IB=0

IE=100 A , IC=0

A , IE=0

600

400

VCB=600V , IE=0

VEB=6V , IC=0

μA

100

Emitter cut-off current

IEBO

μA

hFE(1)

VCE=10V , IC=100mA

VCE=10V , IC=200mA

VCE=10V , IC=10mA

IC=200mA , IB=40mA

VCE=10V , IC=100mA

f=1MHz

DC current gain

hFE(2)

hFE(3)

Collector-emitter saturation voltage

Base-emitter saturation voltage

VCEsat

VBEsat

0.8

1.1

Transition frequency

MHz

Fall time

IC=1A , IB1=-IB2=0.2A ,

VCC=100V

μS

0.5

2.5

Storage time

μS

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