POWER TRANSISTOR E13003
SWITCHING REGULATOR APPLICATION
TO-126
• High speed switching
INCHES
DIM MIN MAX
0.425 0.435 10.80
MILLIMETERS
• Suitable for switching regulator
and motor control
MIN
MAX
11.04
7.74
2.66
0.66
3.30
B
A
B
C
D
F
F
C
U
0.295
0.305
7.50
2.42
0.51
2.93
• Case : TO-126 molded plastic body
0.095 0.105
0.020 0.026
0.115 0.130
0.094 BSC
Q
M
A
G
H
J
2.39 BSC
1
2
3
0.050 0.095
0.015 0.025
1.27
0.39
2.41
0.63
K
M
Q
R
S
0.575 0.655 14.61 16.63
H
K
5
TYP
5
TYP
4.01
0.148 0.158
0.045 0.065
0.025 0.035
0.145 0.155
0.040
3.76
1.15
0.64
3.69
1.02
1.65
0.88
3.93
J
V
U
V
G
R
M
M
M
0.25 (0.010)
A
B
S
NPN SILICON TRANSISTOR
D 2 P L
M
M
M
0.25 (0.010)
A
B
FEATURES Tc=25oC unless otherwise specified
Parameter
Symbol
Value
UNIT
Collector dissipation
PC
IC
20
1.5
3
W
A
Collector current (DC)
Collector current (Pulse)
ICP
A
Operating and storage junction temperature range
TJ, TSTG
-55 oC to +150 oC
oC
ELECTRICAL CHARACTERISTICS Tc=25oC unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=1mA , IE=0
700
400
9
V
V
IC=10mA , IB=0
IE=1mA , IC=0
V
VCB=700V , IE=0
VCE=400V , IB=0
VEB=9V , IC=0
mA
1
500
1
Collector cut-off current
ICEO
μA
Emitter cut-off current
IEBO
mA
hFE(1)
hFE(2)
VCEsat
VBEsat
VBE
VCE=2V , IC=0.5mA
VCE=10V , IC=0.5mA
IC=1A , IB=250mA
IC=1A , IB=250mA
IE=2A
40
8
5
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
1
1.2
3
V
V
V
VCE=10V , IC=100mA
f=1MHz
fT
Transition frequency
5
MHz
Fall time
tf
IC=1A , IB1=-IB2=0.2mA ,
VCC=100V
μS
0.5
2.5
Storage time
ts
μS