Datasheet > E13004_TO-220

E13004_TO-220

更新时间： 2024-11-05 10:20:47

品牌	Logo	应用领域
DAESAN		晶体晶体管
页数	文件大小	规格书
2页	4310K
描述
POWER TRANSISTOR

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数据手册

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E13004_TO-220 数据手册

POWER TRANSISTOR E13004

SWITCHING REGULATOR APPLICATION

TO-220

• High speed switching

S E ATING

P L ANE

• Suitable for switching regulator

and motor control

INC HE S

MIN

MIL L IME TE R S

DIM

MAX

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

• Case : TO-220 molded plastic body

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

NPN SILICON TRANSISTOR

0.080

2.04

FEATURES Tc=25^oC unless otherwise specified

Parameter

Symbol

Value

UNIT

Power dissipation

4.0

8.0

Collector current (DC)

Collector current (Pulse)

ICP

Operating and storage junction temperature range

TJ, TSTG

-55 ^oC to +150 ^oC

^oC

ELECTRICAL CHARACTERISTICS Tc=25^oC unless otherwise specified

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IC=1mA , IE=0

600

300

IC=10mA , IB=0

IE=1mA , IC=0

VCB=600V , IE=0

VCE=300V , IB=0

VEB=9V , IC=0

100

Collector cut-off current

ICEO

μA

Emitter cut-off current

IEBO

DC current gain

hFE

VCE=5V , IC=1A

IC=2A , IB=500mA

VCE=10V , IC=500mA

f=1MHz

0.6

1.6

Collector-emitter saturation voltage

Base-emitter saturation voltage

VCEsat

VBEsat

Transition frequency

MHz

Fall time

IC=2A , IB1=-IB2=0.4mA ,

VCC=125V

μS

0.9

Storage time

μS

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