Datasheet > DTC144TCA

DTC144TCA

更新时间： 2024-11-29 12:56:07

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	199K
描述
NPN Small Signal Transistor

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中文翻译

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技术参数
数据手册

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DTC144TCA 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

DTC144TCA 数据手册

CREAT BY ART

DTC144 TM/TE/TUA/TCA/TSA

NPN Small Signal Transistor

Small Signal Product

Features

◇Built-in bias resistors enable the configuration of an inverter

circuit without connecting external input resistor

(see equivalent circuit)

Equivalent Circuit

◇The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

◇Only the on/off conditions need to be set for

operation, marking device design easy.

◇Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code.

Ordering Information (example)

Packing

code

Packing code

Part No.

Package

Packing

Marking

Manufacture code

(Green)

RMG

DTC144 TM SOT-723

8K / 7" Reel

Maximum Ratings and Electrical Characteristics

Rating at 25 ℃ ambient temperature unless otherwise specified.

Maximum Ratings

Value

Symbol

Units

Type Number

TUA / TCA

200

TSA

300

Power Dissipation

P_D

V_CBO

V_CEO

V_EBO

I_C

100

150

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

^oC

Junction and Storage Temperature Range

T_J, T_STG

- 55 to + 150

Note 1：Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

Condtion

Symbol

Min

Typ

Max

Units

Parameter

I_C= 50μA , I_E=0

I_C= 1mA , I_B=0

I_C= 50μA , I_C=0

V_CB= 50V , I_E=0

V_EB= 4V , I_C=0

Collector-Base Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

0.5

μA

I_EBO

I_C= 5mA , I_B= 0.5mA

V_CE= 5V,I_C= 1mA

Collector-Emitter Saturation Voltage

DC Current Gain

V_CE(sat)

h_FE

0.3

100

300

600

61.1

Input Resistor

R₁

32.9

KΩ

V_CE= 10V , I_E=5mA , f=100MHz

Transition Frequency

f_T

250

MHz

Version：D13

12 3

中文翻译

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