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DTC144TCA-TP PDF预览

DTC144TCA-TP

更新时间: 2024-02-04 23:58:26
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
3页 117K
描述
NPN Digital Transistor

DTC144TCA-TP 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.46
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):56
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC144TCA-TP 数据手册

 浏览型号DTC144TCA-TP的Datasheet PDF文件第2页浏览型号DTC144TCA-TP的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DTC144TCA  
Micro Commercial Components  
Features  
xꢀ Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors (see equivalent circuit)  
xꢀ The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects  
xꢀ Only the on/off conditions need to be set for operation, making  
device design easy  
NPN Digital Transistor  
SOT-23  
A
Absolute Maximum Ratings  
Parameter  
Collector-Base Voltage  
D
Symbol  
VCBO  
Value  
50  
Unit  
V
3
1. Base  
2. Emitter  
3. Collector  
B
C
Collector-Emitter Voltage  
Emitter-Base voltage  
VCEO  
50  
V
1
2
VEBO  
5
V
Collector Current-Continuous  
IC  
100  
mA  
F
E
Collector Dissipation  
PC  
200  
mW  
к
к
Junction Temperature  
TJ  
150  
Storage Temperature Range  
TSTG  
-55~150  
H
G
J
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
K
DIMENSIONS  
MM  
Electrical Characteristics  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
Sym  
Parameter  
Collector-Base Breakdown Voltage  
(IC=50uA, IE=0)  
Min  
Typ  
Max Unit  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
V(BR)CBO  
50  
---  
---  
V
Collector-Emitter Breakdown Voltage  
(IC=1mA, IB=0)  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
5
---  
---  
---  
---  
V
F
Emitter-Base Breakdown Voltage  
(IE=50uA, IC=0)  
G
H
J
.100  
1.12  
.180  
.51  
---  
V
Collector Cut-off Current  
(VCB=50V, IE=0)  
.085  
.37  
---  
0.5  
uA  
K
Emitter Cut-off Current  
(VEB=4V, IC=0)  
IEBO  
---  
---  
0.5  
uA  
---  
Suggested Solder  
Pad Layout  
DC Current Gain  
(VCE=5V, IC=1mA)  
hFE  
100  
300  
600  
.031  
.800  
Collector-Emitter Saturation Voltage  
(IC=10mA, IB=1mA)  
VCE(sat)  
R1  
---  
32.9  
---  
---  
47  
0.3  
61.1  
---  
V
.035  
.900  
Input resistance  
Transition Frequency  
(VCE=10V, IC=-5mA, f=100MHz)  
K=  
MHz  
fT  
250  
.079  
2.000  
inches  
mm  
*Marking: 06  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: 3  
2009/02/11  

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