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DTC144TE_09

更新时间： 2024-11-29 09:58:23
品牌 Logo 应用领域
美微科 - MCC 晶体数字晶体管
页数 文件大小 规格书
3页 114K
描述
NPN Digital Transistor

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中文翻译

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DTC144TE_09 数据手册

 浏览型号DTC144TE_09的Datasheet PDF文件第2页浏览型号DTC144TE_09的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DTC144TE  
Micro Commercial Components  
Features  
xꢀ Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors (see equivalent circuit)  
xꢀ The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects  
xꢀ Only the on/off conditions need to be set for operation, making  
device design easy  
NPN Digital Transistor  
SOT-523  
Absolute Maximum Ratings  
Parameter  
Collector-Base Voltage  
A
Symbol  
VCBO  
Value  
50  
Unit  
V
D
Collector-Emitter Voltage  
Emitter-Base voltage  
VCEO  
50  
V
3
1. Base  
VEBO  
5
V
C
B
2. Emitter  
1
2
3. Collector  
Collector Current-Continuous  
IC  
100  
mA  
Collector Dissipation  
PC  
150  
mW  
E
к
к
Junction Temperature  
TJ  
150  
Storage Temperature Range  
TSTG  
-55~150  
•
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
H
G
J
K
Electrical Characteristics  
DIMENSIONS  
Sym  
Parameter  
Collector-Base Breakdown Voltage  
(IC=50uA, IE=0)  
Min  
Typ  
Max Unit  
INCHES  
MAX  
MM  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
MIN  
1.50  
0.75  
1.45  
MAX  
1.70  
0.85  
1.75  
NOTE  
V(BR)CBO  
50  
---  
---  
V
.059  
.030  
.057  
.067  
.033  
.069  
Collector-Emitter Breakdown Voltage  
(IC=1mA, IB=0)  
V(BR)CEO  
V(BR)EBO  
ICBO  
50  
5
---  
---  
---  
V
.020 Nominal  
0.50Nominal  
0.90  
.000  
.70  
.100  
.25  
Emitter-Base Breakdown Voltage  
(IE=50uA, IC=0)  
.035  
.000  
.028  
.004  
.010  
.043  
.004  
.031  
.008  
.014  
1.10  
---  
V
.100  
0.80  
.200  
.35  
Collector Cut-off Current  
(VCB=50V, IE=0)  
---  
---  
0.5  
0.5  
600  
uA  
uA  
---  
Emitter Cut-off Current  
(VEB=4V, IC=0)  
IEBO  
---  
---  
DC Current Gain  
(VCE=5V, IC=1mA)  
hFE  
100  
300  
Collector-Emitter Saturation Voltage  
(IC=10mA, IB=1mA)  
VCE(sat)  
R1  
---  
32.9  
---  
---  
47  
0.3  
61.1  
---  
V
Input resistance  
Transition Frequency  
(VCE=10V, IC=-5mA, f=100MHz)  
K=  
MHz  
fT  
250  
*Marking: 06  
www.mccsemi .com  
1 of 3  
Revision: 3  
2009/02/11  
123

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